Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions
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==<span style="color:Red">EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.</span>== | |||
[[Category: Equipment |Thermal Jipelec]] | [[Category: Equipment |Thermal Jipelec]] | ||
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==Jipelec - Rapid Thermal Processing== | ==Jipelec - Rapid Thermal Processing== | ||
[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4]] | [[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal]] | ||
The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier). | The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier). | ||
Latest revision as of 12:58, 17 April 2023
Feedback to this page: click here
This page is written by DTU Nanolab internal
EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.
Jipelec - Rapid Thermal Processing
The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).
The user manual, technical information and contact information can be found in LabManager:
| Purpose | RTP annealing | |
|---|---|---|
| Process parameter range | Process Temperature |
|
| Process pressure |
| |
| Gases on the system |
| |
| Substrates | Batch size |
|
| Substrate materials allowed |
A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
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