Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Latest revision as of 12:58, 17 April 2023

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EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.

Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1100 ^oC (only short time a the high temperatures - see the user manual) III-V materials only to 450 ^oC Temperature ramp up to 50 ^oC/min
	Process pressure	1 atm Vacuum
	Gases on the system	N₂
Substrates	Batch size	One 50 mm or 100 mm wafer Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
Substrates	Substrate materials allowed	A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide Silicon nitride Fused silica/quartz Polysilicon III-V materials (on graphite carrier, max 450 ^oC) Some metals - (on graphite carrier). Ask the Thin Film group for permission

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 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP click here]'''
+''This page is written by DTU Nanolab internal''
+==<span style="color:Red">EXPIRED. The Jipelec RTP has has been removed from the cleanroom in March 2023. It has been replaced with the Jipelec RTP2 that can be used instead.</span>==
 [[Category: Equipment |Thermal Jipelec]]
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 ==Jipelec - Rapid Thermal Processing==
-[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4]]
+[[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal]]
 The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).
@@ Line 25: / Line 29: @@
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*0-1100 <sup>o</sup>C
+*0-1100 <sup>o</sup>C (only short time a the high temperatures - see the user manual)
 *III-V materials only to 450 <sup>o</sup>C
-*Temperature ramp up to 300 <sup>o</sup>C/min
+*Temperature ramp up to 50 <sup>o</sup>C/min
 |-
@@ Line 44: / Line 48: @@
 |style="background:WhiteSmoke; color:black"|
 *One 50 mm or 100 mm wafer
-*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
+*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
+A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
 *Silicon
 *Silicon oxide
@@ Line 56: / Line 60: @@
 *Polysilicon
 *III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
-*Some metals - Ask the Thin Film group for permission
+*Some metals - (on graphite carrier). Ask the Thin Film group for permission
 |-
 |}