Specific Process Knowledge/Lithography/4562: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/4562 click here]''' | |||
[[Category: Lithography|Resist]] | |||
[[Category: Resist|AZ 4562]] | |||
__TOC__ | __TOC__ | ||
==Resist description== | ==Resist description== | ||
AZ 4562 is a positive UV photoresist for thick coatings ( | AZ 4562 is a positive UV photoresist for thick coatings (5 - 10 µm). | ||
==Priming== | ==Priming== | ||
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==Spin coating== | ==Spin coating== | ||
[[Image:4562spincurves.JPG|500x500px|thumb|Spin curves for AZ 4562 using | [[Image:4562spincurves.JPG|500x500px|thumb|Spin curves for AZ 4562 using 60 s spin-off and 60 s @ 100°C softbake on LabSpin, and 30 s spin-off and 300 s @ 100°C 1 mm proximity softbake on Gamma]] | ||
'''Typical spin parameters:''' | '''Typical spin parameters:''' | ||
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The thickest achievable coating using a normal spin cycle is | The thickest achievable coating using a normal spin cycle is 10 µm. However, reducing the spin-off time to a few seconds at 2000 rpm, has successfully been used to increase the coating thickness beyond 20 µm on a Gamma coater. The substrate waits for 1 min before softbake, in order to reduce the edge bead height. | ||
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After exposure, the nitrogen generated in the resist film must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower. | After exposure, the nitrogen generated in the resist film must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower. | ||
'''Exposure in mask aligner:''' | |||
'''Exposure in mask aligner:'''<br> | |||
In order to avoid heating during exposure, leading to the formation of bubbles, it is recommended to use multiple exposure, limiting the exposure time for each cycle to 10-15 s, and using a 10-15 s pause between cycles. | In order to avoid heating during exposure, leading to the formation of bubbles, it is recommended to use multiple exposure, limiting the exposure time for each cycle to 10-15 s, and using a 10-15 s pause between cycles. | ||
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The recommended development speed in 2.38% TMAH (AZ | '''Multi-puddle development:'''<br> | ||
The recommended development speed in 2.38% TMAH (AZ 726 MIF) for AZ 4562 is 2 µm/min.<br> | |||
A 6.2 µm resist film requires ~3 min development, recommended as three separate 60 s puddles. 10 µm AZ 4562 has successfully been developed using 4 x 60 s development. | |||
Latest revision as of 15:04, 5 April 2023
This section, including all images and pictures, is created by DTU Nanolab staff unless otherwise stated.
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Resist description
AZ 4562 is a positive UV photoresist for thick coatings (5 - 10 µm).
Priming
HMDS priming is recommended for improved adhesion.
Spin coating
Typical spin parameters:
- Spin off: 30-60 s
- Soft bake: 300 s @ 100°C in proximity
The thickest achievable coating using a normal spin cycle is 10 µm. However, reducing the spin-off time to a few seconds at 2000 rpm, has successfully been used to increase the coating thickness beyond 20 µm on a Gamma coater. The substrate waits for 1 min before softbake, in order to reduce the edge bead height.
Exposure
Before exposure, the resist must be rehydrated:
- A 1-2 µm resist film requires less than 1 minute
- A 6 µm resist film requires 15-20 min
- A 10 µm resist film requires an hour, or more
After exposure, the nitrogen generated in the resist film must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower.
Exposure in mask aligner:
In order to avoid heating during exposure, leading to the formation of bubbles, it is recommended to use multiple exposure, limiting the exposure time for each cycle to 10-15 s, and using a 10-15 s pause between cycles.
Development
Development speed:
- Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min
Multi-puddle development:
The recommended development speed in 2.38% TMAH (AZ 726 MIF) for AZ 4562 is 2 µm/min.
A 6.2 µm resist film requires ~3 min development, recommended as three separate 60 s puddles. 10 µm AZ 4562 has successfully been developed using 4 x 60 s development.