Specific Process Knowledge/Lithography/nLOF: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/nLOF click here]''' | |||
[[Category: Lithography|Resist]] | |||
[[Category: Resist|AZ nLOF 2020]] | |||
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'''Typical spin parameters:''' | '''Typical spin parameters:''' | ||
*Spin off: 30-60 s | *Spin off: 30-60 s | ||
*Soft bake: | *Soft bake: 60 s @ 110°C | ||
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*PEB time: 60 s | *PEB time: 60 s | ||
The recommended PEB for nLOF is | |||
The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness. | |||
'''PEB baking time investigation:''' | '''PEB baking time investigation:''' | ||
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A 2 µm nLOF resist film is fully developed in | A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut). | ||
Latest revision as of 14:30, 5 April 2023
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Resist description
AZ nLOF 2020 is a negative UV photoresist, suitable for lift-off processes.
Spin coating
Typical spin parameters:
- Spin off: 30-60 s
- Soft bake: 60 s @ 110°C
Post-exposure bake
Typical PEB parameters:
- PEB temperature: 110°C
- PEB time: 60 s
The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness.
PEB baking time investigation:
While 60 s @ 110°C is adequate for Si substrates, less thermally conductive substrates (glass, III-V materials, chips bonded to carrier), have shown problems using the standard PEB recipe.
These problems were largely solved by increasing the PEB time to 120 s. Tests (on Aligner: Maskless 02) have shown that the lithographic performance of nLOF on Si is improved when using 120 s @ 110°C PEB (less stitching, less bias, more negative profile). A small report on the tests can be found here.
Development
Development speed:
- Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min
A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut).