Specific Process Knowledge/Etch/Etching of Platinum: Difference between revisions

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[[Category: Equipment|Etch Wet Platinum]]
 
[[Category: Etch (Wet) bath|Platinum]]
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==Etching of Platinum==
==Etching of Platinum==
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!Etch rate range
!Etch rate range
|
|
*~100nm/min
*~ 1 - 10 nm/min (not tested yet)
|
|
*~55nm/min (not tested yet)  
*~30nm/min (not tested yet)  
|-
|-



Latest revision as of 16:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

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Feedback to this page: click here

Etching of Platinum

Etching of Platinum can be done either by wet etch or by sputtering with ions.


Comparison of Platinum Etch Methods

Pt wet etch IBE (Ionfab300+)
Generel description Wet etch of Pt Sputtering of Pt
Etch rate range
  • ~ 1 - 10 nm/min (not tested yet)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (angles sidewalls, typical around 70 dg)
Masking material
  • None (only used for stripping Pt)
  • Any material that is allowed in the chamber, photoresists included
Substrate size
  • Any size and number that can go inside the beaker in use

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape