Specific Process Knowledge/Etch/Etching of Platinum: Difference between revisions

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[[Category: Equipment|Etch Wet Platinum]]
 
[[Category: Etch (Wet) bath|Platinum]]
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==Etching of Platinum==
==Etching of Platinum==
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==Comparison of Gold Etch Methods==
==Comparison of Platinum Etch Methods==


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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Platinum Etch|Pt wet etch]]
![[Specific Process Knowledge/Etch/Wet Gold Etch|Au wet etch 2]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of Au using Iodine based chemistry
|Wet etch of Pt
|Wet etch of Au using Aqua Regina
|Sputtering of Pt
|Sputtering of Au - pure physical etch
|-
|-


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!Etch rate range
!Etch rate range
|
|
*~100nm/min
*~ 1 - 10 nm/min (not tested yet)
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|
*~?nm/min - fast etch
*~30nm/min (not tested yet)  
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*~55nm/min (acceptance test)  
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Etch profile
!Etch profile
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*Isotropic
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|
*Isotropic
*Isotropic
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!Masking material
!Masking material
|
|
*Photoresist
*None (only used for stripping Pt)
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*None (only used for stipping Au)
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|
*Any material that is allowed in the chamber, photoresists included  
*Any material that is allowed in the chamber, photoresists included  
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!Substrate size
!Substrate size
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|
*Any size and number that can go inside the beaker in use  
*Any size and number that can go inside the beaker in use
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*Any size and number that can go inside the beaker in use
 
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|
Smaller pieces glued to carrier wafer
Smaller pieces glued to carrier wafer
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!'''Allowed materials'''
!'''Allowed materials'''
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|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals  
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
*Silicon  
*Silicon  

Latest revision as of 16:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here

Etching of Platinum

Etching of Platinum can be done either by wet etch or by sputtering with ions.


Comparison of Platinum Etch Methods

Pt wet etch IBE (Ionfab300+)
Generel description Wet etch of Pt Sputtering of Pt
Etch rate range
  • ~ 1 - 10 nm/min (not tested yet)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (angles sidewalls, typical around 70 dg)
Masking material
  • None (only used for stripping Pt)
  • Any material that is allowed in the chamber, photoresists included
Substrate size
  • Any size and number that can go inside the beaker in use

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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