Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

Latest revision as of 11:18, 2 February 2023

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This page is written by DTU Nanolab internal

EXPIRED!!! The Noble furnace has been removed from the cleanroom January 2020.

Noble furnace

The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 ^oC.

In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).

The furnace is located in service area Cx1.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose	Oxidation Annealing	Oxidation: Dry Wet (with bubbler. Water steam + N₂) Annealing: N₂ Ar
Process parameter range	Process Temperature	Up to 1000 ^oC
	Process pressure	1 atm
	Gasses on the system	N₂: 0-5 SLM O₂: 0-5 SLM Ar: 0-7 SLM
Substrates	Batch size	1-25 100 mm wafers (or 50 mm wafers) per run A number of smaller samples (placed on a Si carrier wafer)
Substrates	Substrate material allowed	Silicon samples Silicon samples with metals Silicon sample with polymers (only approved materials)

@@ Line 1: / Line 1: @@
-==Noble Furnace==
+'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''
-This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.
+''This page is written by DTU Nanolab  internal''
-The Noble Furnace is located in service room 3.
-[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
+[[Category: Equipment |Thermal Noble]]
+[[Category: Thermal process|Noble]]
+[[Category: Furnaces|Noble]]
+===<span style="color:Red">EXPIRED!!! The Noble furnace has been removed from the cleanroom January 2020.</span>===
+==Noble furnace==
+The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 <sup>o</sup>C.
+In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).
+The furnace is located in service area Cx1.
+Please check the cross contamination information in LabManager before you use the furnace.
+[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal]]
+'''The user manual, technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=150 Noble furnace]'''
 ==Overview of the performance of the Noble Furnace==
-{| border="2" cellspacing="0" cellpadding="0"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Oxide growth, annealing
-|style="background:WhiteSmoke; color:black"|
-|-
-!style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|
+*Oxidation
+*Annealing
 |style="background:WhiteSmoke; color:black"|
-*
+Oxidation:
+*Dry
+*Wet (with bubbler. Water steam + N<sub>2</sub>)
+Annealing:
+*N<sub>2</sub>
+*Ar
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*20-1000 <sup>o</sup>C
+*Up to 1000 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
@@ Line 31: / Line 53: @@
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>:0-5 sccm
+*N<sub>2</sub>: 0-5 SLM
-*O<sub>2</sub>: 0-5 sccm
+*O<sub>2</sub>: 0-5 SLM
+*Ar: 0-7 SLM
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-25 4" wafer (or 2" wafers) per run
+*1-25 100 mm wafers (or 50 mm wafers) per run
+*A number of smaller samples (placed on a Si carrier wafer)
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon samples
-*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace
+*Silicon samples with metals
+*Silicon sample with polymers (only approved materials)
 |-
 |}