Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions
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'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]''' | '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]''' | ||
''This page is written by DTU Nanolab internal'' | |||
[[Category: Equipment |Thermal Noble]] | |||
[[Category: Thermal process|Noble]] | |||
[[Category: Furnaces|Noble]] | |||
===<span style="color:Red">EXPIRED!!! The Noble furnace has been removed from the cleanroom January 2020.</span>=== | |||
==Noble furnace== | ==Noble furnace== | ||
The Noble Furnace is | The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 <sup>o</sup>C. | ||
In the Noble Furnaces more dirty samples with | In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer). | ||
The furnace is located | The furnace is located in service area Cx1. | ||
Please check the cross contamination information in LabManager before you use the furnace. | |||
[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal]] | |||
'''The user manual, technical information and contact information can be found in LabManager:''' | '''The user manual, technical information and contact information can be found in LabManager:''' | ||
| Line 21: | Line 28: | ||
==Overview of the performance of the Noble Furnace== | ==Overview of the performance of the Noble Furnace== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="2" | ||
|- | |- | ||
!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
| Line 30: | Line 37: | ||
Oxidation: | Oxidation: | ||
*Dry | *Dry | ||
*Wet (with bubbler) | *Wet (with bubbler. Water steam + N<sub>2</sub>) | ||
Annealing: | Annealing: | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
* | *Ar | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
| Line 46: | Line 53: | ||
|style="background:LightGrey; color:black"|Gasses on the system | |style="background:LightGrey; color:black"|Gasses on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub>:0-5 SLM | *N<sub>2</sub>: 0-5 SLM | ||
*O<sub>2</sub>: 0-5 SLM | *O<sub>2</sub>: 0-5 SLM | ||
* | *Ar: 0-7 SLM | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
| Line 54: | Line 61: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1-25 100 mm wafers (or 50 mm wafers) per run | *1-25 100 mm wafers (or 50 mm wafers) per run | ||
*A number of smaller samples (placed on a Si carrier wafer) | |||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon samples | *Silicon samples | ||
*Silicon samples with metals | *Silicon samples with metals | ||
*Silicon sample with polymers (only approved materials) | *Silicon sample with polymers (only approved materials) | ||
|- | |- | ||
|} | |} | ||
Latest revision as of 11:18, 2 February 2023
Feedback to this page: click here
This page is written by DTU Nanolab internal
EXPIRED!!! The Noble furnace has been removed from the cleanroom January 2020.
Noble furnace
The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 oC.
In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).
The furnace is located in service area Cx1.
Please check the cross contamination information in LabManager before you use the furnace.
The user manual, technical information and contact information can be found in LabManager:
Overview of the performance of the Noble Furnace
| Purpose |
|
Oxidation:
Annealing:
|
|---|---|---|
| Process parameter range | Process Temperature |
|
| Process pressure |
| |
| Gasses on the system |
| |
| Substrates | Batch size |
|
| Substrate material allowed |
|