Specific Process Knowledge/Thermal Process/BCB Curing Oven: Difference between revisions

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==This page is under contruction==
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thermal_Process/BCB_Curing_Oven click here]'''
 
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[[Category: Equipment |Thermal BCB]]
[[Category: Thermal process|BCB]]


== BCB Curing Oven ==
== BCB Curing Oven ==
[[image:BCB oven.jpeg|350x350px|right|thumb|The BCB Curing Oven. Positioned in room Cx1/ Photo: DTU Nanolab internal]]
The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of some metals in a nitrogen atmosphere.
During processing the oven is rapidly heated by use of eight halogen lamps situated below the sample. The maximum allowed temperature is 450 <sup>o</sup>C.


The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of metal in a nitrogen atmosphere.
The oven is purged with a nitrogen flow (high or low flow). Samples are processed at atmospheric pressure or at vacuum.


During processing the furnace is rapidly heated by use of five halogen lamps below the sample. The furnace is purged with a controlable nitrogen flow. There is vacuum on the furnace.


'''The user manual, user APV, technical information and contact information can be found in LabManager:'''
'''The user manual, user APV, technical information and contact information can be found in LabManager:'''
[[image:BCB oven.jpeg|350x350px|right|thumb|The BCB Curing Oven. Located in the III-V Lab]]


[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=295 BCB Curing Oven]
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=295 BCB Curing Oven]
Line 15: Line 21:
== Process information ==
== Process information ==


There are no standard processes on the furnace.  
Here are some of the standard processes used in the BCB Curing Oven.
 
=== BCB curing===
 
An example of a curing recipe (BCB250BL.PDF) for a long curing process at 250°C is shown below.
 
Content of BCB250BL.PDF:
<pre>
;
; stored 31.08.2011  at 17:55:33
{P0}
00,00:30,0020,- - - - 3 - - - -,075,250,001,005,028
01,00:10,0020,- - - 2 - - - - -
02,00:30,0020,- - - - 3 - - - -
03,00:10,0020,- - - 2 - - - - -
04,05:00,0050,H - - 2 - - - - -
05,05:00,0050,H C - 2 - - - - -
06,15:00,0100,H - 1 - - - - - -
07,45:00,0100,H C 1 - - - - - -
08,15:00,0150,H - 1 - - - - - -
09,81:00,0150,H C 1 - - - - - -
10,60:00,0250,H - 1 - - - - - -
11,60:00,0250,H C 1 - - - - - -
12,15:00,0020,- C 1 - - - - - -
13,30:00,0020,- C 1 - - - - - -
14,00:00,0010,- C - - - - - - -
</pre>
 
 
===General processes===
 
There are a number of general processes on the oven named DxxxCyyy.PDF.
 
The "Dxxx" in the recipe is the set temperature (in °C) and the "Cyyy" is the time (in minutes) at the set temperature.
 
The oven heats to the set temperature (xxx) in 5 mins and then stays at the temperature (xxx) for a time (yyy), after which it cools to room temperature as fast as possible.
 
The program sequence looks like this for the file D200C060.PDF:
<pre>;
; stored 31.08.2011  at 18:15:47
{P0}
00,05:00,0200,H - - 2 - - - - -,075,250,001,005,028
01,60:00,0200,H C 1 - - - - - -
02,05:00,0002,- C 1 - - - - - -
03,00:00,0000,- C - - - - - - -
</pre>


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Resist Pyrolysis Furnace</b>
|style="background:WhiteSmoke; color:black"|<b>BCB Curing Oven</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Pyrolysis of different resist layers to form conductive structures
*BCB curing
*Metal alloying
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*0-1000<sup>o</sup>C
*Room temperature - 450<sup>o</sup>C
*Temperature ramp-up rate: Max 10<sup>o</sup>C/min
*Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
|-
|-
|style="background:LightGrey; color:black"|Nitrogen flows
|style="background:LightGrey; color:black"|Nitrogen flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Flow 1: Max 660 liter/hour
*Low N<sub>2</sub> flow: 5 SLM
*Flow 2: Max 3500 liter/hour
*High N<sub>2</sub> flow: Max 16.7 SLM
|-
|style="background:LightGrey; color:black"|Pressure
|style="background:WhiteSmoke; color:black"|
*Atmospheric pressure or vacuum
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
(Remember to use the right carrier wafer)
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Several small samples (placed on Si support wafers)
*Several small samples  
*One-six 50 mm wafers (placed on Si support wafers)
*One 50 mm wafer
*One-six 100 mm wafers
*One 100 mm wafer
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*BCB
*Silicon oxide
*III-V materials
*Silicon nitride
*Co-polymer
*Silicon, silicon oxide, silicon nitride
*Quartz
*Quartz
*AZ resist (prebaked)
*Resist (prebaked)
*SU-8 (prebaked)
*Metals (only Al, Ni, Ge and Au)
|-  
|-  
|}
|}

Latest revision as of 15:19, 31 January 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal

BCB Curing Oven

The BCB Curing Oven. Positioned in room Cx1/ Photo: DTU Nanolab internal

The BCB Curing Oven is mainly used for curing of BCB (bisbenzocyclobutene) and for alloying of some metals in a nitrogen atmosphere.

During processing the oven is rapidly heated by use of eight halogen lamps situated below the sample. The maximum allowed temperature is 450 oC.

The oven is purged with a nitrogen flow (high or low flow). Samples are processed at atmospheric pressure or at vacuum.


The user manual, user APV, technical information and contact information can be found in LabManager:

BCB Curing Oven

Process information

Here are some of the standard processes used in the BCB Curing Oven.

BCB curing

An example of a curing recipe (BCB250BL.PDF) for a long curing process at 250°C is shown below.

Content of BCB250BL.PDF: 

;
; stored 31.08.2011  at 17:55:33
{P0}
00,00:30,0020,- - - - 3 - - - -,075,250,001,005,028
01,00:10,0020,- - - 2 - - - - -
02,00:30,0020,- - - - 3 - - - -
03,00:10,0020,- - - 2 - - - - -
04,05:00,0050,H - - 2 - - - - -
05,05:00,0050,H C - 2 - - - - -
06,15:00,0100,H - 1 - - - - - -
07,45:00,0100,H C 1 - - - - - -
08,15:00,0150,H - 1 - - - - - -
09,81:00,0150,H C 1 - - - - - -
10,60:00,0250,H - 1 - - - - - -
11,60:00,0250,H C 1 - - - - - -
12,15:00,0020,- C 1 - - - - - -
13,30:00,0020,- C 1 - - - - - -
14,00:00,0010,- C - - - - - - -


General processes

There are a number of general processes on the oven named DxxxCyyy.PDF.

The "Dxxx" in the recipe is the set temperature (in °C) and the "Cyyy" is the time (in minutes) at the set temperature.

The oven heats to the set temperature (xxx) in 5 mins and then stays at the temperature (xxx) for a time (yyy), after which it cools to room temperature as fast as possible.

The program sequence looks like this for the file D200C060.PDF: 

;
; stored 31.08.2011  at 18:15:47
{P0}
00,05:00,0200,H - - 2 - - - - -,075,250,001,005,028
01,60:00,0200,H C 1 - - - - - -
02,05:00,0002,- C 1 - - - - - -
03,00:00,0000,- C - - - - - - -

Equipment performance and process related parameters

Equipment BCB Curing Oven
Purpose
  • BCB curing
  • Metal alloying
Process parameter range Temperature
  • Room temperature - 450oC
Nitrogen flows
  • Low N2 flow: 5 SLM
  • High N2 flow: Max 16.7 SLM
Pressure
  • Atmospheric pressure or vacuum
Substrates

(Remember to use the right carrier wafer)

Batch size
  • Several small samples
  • One 50 mm wafer
  • One 100 mm wafer
Allowed materials
  • BCB
  • III-V materials
  • Co-polymer
  • Silicon, silicon oxide, silicon nitride
  • Quartz
  • Resist (prebaked)
  • Metals (only Al, Ni, Ge and Au)
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