Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121: Difference between revisions
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== The nano1.21 recipe == | == The nano1.21 recipe == | ||
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Latest revision as of 10:23, 9 August 2022
The nano1.21 recipe
| Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 50 W PP | |
| Temperature | -10 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 1925 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down to 74 nm |
- The results of the nano1.21 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Avg | Std |
| Etch rates | nm/min | 168 | 182 | 185 | 189 | 191 | 183 | 9 |
| Sidewall angle | degs | 91 | 91 | 91 | 91 | 90 | 91 | 0 |
| CD loss | nm/edge | 7 | -3 | -3 | -25 | -26 | -10 | 15 |
| CD loss foot | nm/edge | 12 | 9 | 10 | -11 | 1 | 4 | 9 |
| Bowing | 9 | 6 | 4 | 5 | 7 | 6 | 2 | |
| Bottom curvature | -47 | -34 | -34 | -26 | -19 | -32 | 10 | |
| zep | nm/min | 69 | ||||||