Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2: Difference between revisions
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<!--Checked for updates on 11/2-2019 - ok/jmli --> | <!--Checked for updates on 11/2-2019 - ok/jmli --> | ||
<!--Page reviewed by jmli 9/8-2022 --> | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | ||
|+ '''Process runs''' | |+ '''Process runs''' | ||
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| Pegasus/jmli | | Pegasus/jmli | ||
| 10 minute TDESC clean + 45 sec barc etch | | 10 minute TDESC clean + 45 sec barc etch | ||
| | | nanolab/jml/showerhead/Cpoly2, 20 cycles or 2:08 minutes | ||
| S004729 | | S004729 | ||
| New showerhead | | New showerhead | ||
Latest revision as of 10:12, 9 August 2022
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 3/12-2014 | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | nanolab/jml/showerhead/Cpoly2, 20 cycles or 2:08 minutes | S004729 | New showerhead | |
