Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan33: Difference between revisions

Latest revision as of 15:17, 24 August 2021

**Recipe Sinano3.3**
Recipe	Gas	BCl₃ 5 sccm, HBR 15 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 75 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	180 secs
Conditions	Run ID	430, 4325 ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	The 180 nm zep resist etched down to 64 nm

The results of the Sinano3.3 recipe
The 30 nm trenches
The 60 nm trenches
The 90 nm trenches
The 120 nm trenches
The 150 nm trenches
File:BCl3 5 sccm, HBr 15 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 75 W PP, 20 degs, 180 secs

@@ Line 1: / Line 1: @@
+<!--Checked for updates on 10/7-2019 - ok/jmli -->
+<!-- Ok, jmli 20170627 -->
+<!--Checked for updates on 24/8-2021. ok/ jmli-->
 == The Sinano3.3 recipe ==
+<!-- revised 1/6-2015 by jmli -->
 {| border="2" cellpadding="2" cellspacing="1"
 |+ '''Recipe Sinano3.3'''
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 |-
 | Mask
-| 180 nm zep etched down to 64 nm
+| The [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/nanoetch/180nmzep|180 nm zep resist]] etched down to 64 nm
 |-
 |}