Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
Line 12: Line 12:
It is not only usable for Al deposition. The thermal evaporator has room for two evaporation sources and thereby the possibility to make thin films of two different metals. At the moment not that many metals have been tested, so right now only Al and Ag can be evaporated. We have attempted to evaporate Au and Zn but these are not standard processes.  If you would like to deposit these or other metals, please talk to the Thin Film group.
It is not only usable for Al deposition. The thermal evaporator has room for two evaporation sources and thereby the possibility to make thin films of two different metals. At the moment not that many metals have been tested, so right now only Al and Ag can be evaporated. We have attempted to evaporate Au and Zn but these are not standard processes.  If you would like to deposit these or other metals, please talk to the Thin Film group.


Compared to the Wordentec, the thermal evaporator is quicker to use if you only need to deposit on one wafer or on small samples, as it only takes about 15 minutes to pump down the chamber. You can also deposit thicker layers because the throw distance from source to sample is shorter, so the material use is more efficient: In the thermal evaporator, you get about 40-50 nm per metal pellet, whereas in the Wordentec you get about 15 nm per pellet.
Compared to the Wordentec, the thermal evaporator is quicker to use if you only need to deposit on one wafer or on small samples, as it only takes about 15 minutes to pump down the chamber. You can also deposit thicker layers because the throw distance from source to sample is shorter, so the material use is more efficient: In the thermal evaporator, you get about 40-50 nm per metal pellet, whereas in the Wordentec you get about 15 nm per pellet. However, the thickness uniformity is somewhat better in the Wordentec also because of the longer distance from source to sample.





Revision as of 12:04, 31 October 2018

Feedback to this page: click here


Thermal evaporator- A system for deposition of metals

Positioned in cleanroom A-1.

The main purpose of the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate.

It is not only usable for Al deposition. The thermal evaporator has room for two evaporation sources and thereby the possibility to make thin films of two different metals. At the moment not that many metals have been tested, so right now only Al and Ag can be evaporated. We have attempted to evaporate Au and Zn but these are not standard processes. If you would like to deposit these or other metals, please talk to the Thin Film group.

Compared to the Wordentec, the thermal evaporator is quicker to use if you only need to deposit on one wafer or on small samples, as it only takes about 15 minutes to pump down the chamber. You can also deposit thicker layers because the throw distance from source to sample is shorter, so the material use is more efficient: In the thermal evaporator, you get about 40-50 nm per metal pellet, whereas in the Wordentec you get about 15 nm per pellet. However, the thickness uniformity is somewhat better in the Wordentec also because of the longer distance from source to sample.


The user manual, APV, technical information and contact information can be found in LabManager:

Thermal Evaporator in LabManager


Process information

Materials for thermal evaporation

Equipment performance and process related parameters

Purpose Deposition of metals
  • Thermal evaporation of metals
Performance Film thickness
  • 10Å - 1µm
Deposition rate
  • 0.5-2 Å/s (Al), 5 Å/s (Ag)
  • In general, 0.5-10 Å/s is possible
  • We need to develop a new process for each rate
Thickness uniformity
  • approx. 12 % change from center to edge on a 4" wafer with 100 nm Al
  • approx. 20 % change from center to edge on a 4" wafer with 100 nm Ag
Pumpdown time
  • about 15 min
Process parameter range Process Temperature
  • Approximately room temperature
Process pressure
  • Below 4*10-6 mbar
Substrates Batch size
  • Up to 8" wafer
  • Or several smaller pieces
  • Deposition on one side of the substrate
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • Metals