Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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[[Category: Equipment |Etch RIE]] | [[Category: Equipment |Etch RIE]] | ||
[[Category: Etch (Dry) Equipment |RIE]] | [[Category: Etch (Dry) Equipment |RIE]] | ||
=Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned= | |||
== Etching using the dry etch technique RIE (Reactive Ion Etch) == | == Etching using the dry etch technique RIE (Reactive Ion Etch) == |
Revision as of 14:40, 7 May 2018
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Both RIE's (RIE1 and RIE2) for silicon based etching has been decommissioned
Etching using the dry etch technique RIE (Reactive Ion Etch)
At Danchip we have now two RIE's. RIE2 for etching silicon based materials, resist and polymers and one (III-V RIE) for etching III-V materials. Here only RIE2 will be described.
In RIE2 it is allowed to have small amounts of metals exposed to the plasma.
The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:
Process information
- Etch of silicon using RIE
- Etch of silicon oxide using RIE
- Etch of silicon nitride using RIE
- Etch of photo resist using RIE
Equipment | RIE1 - HAS BEEN DECOMMISSIONED | RIE2 | |
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Purpose | Dry etch of |
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Performance | Etch rates |
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Anisotropy |
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Process parameter range | Max pressure |
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Max R.F. power |
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Gas flows |
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Substrates | Batch size |
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Allowed materials |
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