Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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| Line 75: | Line 75: | ||
! Coil | ! Coil | ||
! Platen | ! Platen | ||
! Showerhead | |||
! Runs | ! Runs | ||
! width="100" | Key words | ! width="100" | Key words | ||
| Line 95: | Line 95: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! Old <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]] <!-- link processes --> | ||
| Slightly over-etching to ensure complete absence of grass <!-- keywords --> | | Slightly over-etching to ensure complete absence of grass <!-- keywords --> | ||
| Line 114: | Line 114: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
| Line 133: | Line 133: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1 | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly1 | 1]] <!-- link processes --> | ||
| Very aggressive, unusable <!-- keywords --> | | Very aggressive, unusable <!-- keywords --> | ||
| Line 152: | Line 152: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2 | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly2 | 1]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
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| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3 | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly3 | 1]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
| Line 190: | Line 190: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4 | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4 | 1]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
| Line 209: | Line 209: | ||
| 400 <!-- coil power --> | | 400 <!-- coil power --> | ||
| 40 <!-- platen power --> | | 40 <!-- platen power --> | ||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly5 | 1]] <!-- link processes --> | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly5 | 1]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
|- | |- | ||
|} | |} | ||
Revision as of 15:06, 11 December 2014
Comparison of continuous processes
| Process | Before | After | |||||
|---|---|---|---|---|---|---|---|
| Name/Type | Description | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
| Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | 
|
S004679 | Wafer centre | 
|
| S004592 | Wafer edge | 
|
S004679 | Wafer edge | 
| ||
| S00XXX | 8" wafer | S00XXX | Wafer centre | File:S00XX centre.jpg | |||
| S00XXXx | Wafer edge | File:S00XXX dge.jpg | S00XXX | Wafer edge | File:S00xxxx edge.jpg | ||
Comparison of switched processes
| Recipe description | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
| Polysilicon etch | polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | Old | 1 | Slightly over-etching to ensure complete absence of grass |
| polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly1 | 30 | 1.2 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | Very aggressive, unusable | |
| Cpoly2 | 30 | 1.4 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly3 | 30 | 1.6 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly4 | 30 | 1.8 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
| Cpoly5 | 30 | 2.0 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||