Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions

From LabAdviser
Jump to navigation Jump to search
No edit summary
Line 16: Line 16:


==Process knowledge==
==Process knowledge==
==Quality Control - Recipe Parameters and Limits==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for the Thickness measurer'''
|-
|
*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1831&mach=198 The QC procedure]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=2062 The newest QC data]<br>
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
! QC Recipe:
! Wet1050
! Dry1050
|-
| H<sub>2</sub> flow
|3 sccm
|0 sccm
|-
|O<sub>2</sub> flow
|2 sccm
|5 sccm
|-
|Temperature
|1050 C
|1050 C
|-
|Oxidation time
|30 min
|100 min
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
|Thickness
|Non-uniformity (both over a single wafer
and over the boat)
|-
!Dry1050
|110-116 nm
|3 %
|-
!Wet1050
|305-321 nm
|5 %
|-
|}
|-
|}
|}




Revision as of 11:47, 13 January 2014

THIS PAGE IS UNDER CONSTRUCTIONUnder construction.png

Feedback to this page: click here

Thickness measurer

File:??.jpg
Thickness meassurer. Positioned in cleanroom 4

The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.

Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.

The user manual, technical information and contact information can be found in LabManager:

Thickness measurer

Process knowledge

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the Thickness measurer
QC Recipe: Wet1050 Dry1050
H2 flow 3 sccm 0 sccm
O2 flow 2 sccm 5 sccm
Temperature 1050 C 1050 C
Oxidation time 30 min 100 min
QC limits Thickness Non-uniformity (both over a single wafer

and over the boat)

Dry1050 110-116 nm 3 %
Wet1050 305-321 nm 5 %


Equipment performance and process related parameters

Purpose

Measurer the thinkness of silicon wafer

??

Performance

??

??

Process parameter range

Process Temperature

  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination


Feedback to this page: click here


This is a micrometer-screw.

The Thickness measurer in Cleanroom 3

It measures with an accurracy within a few µm. The range is from a few µm up to 5mm. Measure the wafer in the box next to the meter. If this is ok, then other wafers can be measured. There is a calibration device by the DEKTAK. It is calibrated at 750µm.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization/Thickness_Measurer&oldid=12360"