Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace

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C3 Furnace Anneal Bond

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C2 Furnace Anneal Bond: positioned in cleanroom 2

C3 Furnace Anneal Bond is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.

This furnace is the second furnace tube in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that comes directly from bonding in EVG NIL (assuming they were very clean when entering EVG NIL). Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge


Overview of the performance of Anneal Bond furnace and some process related parameters

Purpose Oxidation and annealing Oxidation:
  • Dry
  • Wet: with bubbler (water steam + N2)
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker)
  • Wet SiO2: 50Å to ~5µm ((takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gas flows
  • N2:? sccm
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
    • with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)
  • From bonding in EVG NIL directly (assuming they fulfilled the above before entering the EVG NIL)