Specific Process Knowledge/Lithography/Resist/Ebeamresist

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Standard E-beam resists and process guidelines

DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.


Resist Polarity Manufacturer Comments Technical reports Spin Coater Thinner Developer Rinse Remover Process flows (in docx-format)
CSAR AR-P 6200 Positive AllResist Standard positive resist, very similar to ZEP520. AR-P 6200 info Gamma E-beam & UV or Labspin 2/3 Anisole
  • AR-600-546
  • AR-600-548
  • N50
  • MIBK:IPA
 IPA
  • AR-600-71
  • Remover 1165
 Process Flow CSAR.docx‎
Process Flow CSAR with ESPACER
Process Flow CSAR with Al
Process Flow LOR5A with CSAR
Medusa AR-N 8200 Negative AllResist Both e-beam and DUV sensitive resist. AR-N 8200 info Labspin 2/3 AR 600-07 AR 300-47:DIW (1:1) DIW BOE
AR-N 7500 Negative AllResist Both e-beam, DUV and UV-sensitive resist. AR-N 7500 info Labspin 2/3 PGMEA
  • AR 300-47:DIW (4:1)
  • MIF726:DIW (8:5)
 DIW
  • AR 300-73
  • O2 plasma


Non-Standard E-beam resists

It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.


Resist Polarity Manufacturer Comments Technical reports Spin Coater Thinner Developer Rinse Remover Process flows (in docx-format)
ZEP520A Positive resist, contact Lithography if you plan to use this resist ZEON Positive resist ZEP520A.pdf, ZEP520A spin curves on SSE Spinner See table here Anisole ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. JJAP-51-06FC05.pdf‎, JVB001037.pdf‎ IPA acetone/1165 Process_Flow_ZEP.docx


Copolymer AR-P 617 Positive AllResist Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact Lithography for information. AR_P617.pdf‎ See table here PGME AR 600-55, MIBK:IPA acetone/1165 Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx‎
mr EBL 6000.1 Negative MicroResist Standard negative resist mrEBL6000 processing Guidelines.pdf‎ See table here Anisole mr DEV IPA mr REM Process_Flow_mrEBL6000.docx‎
HSQ (XR-1541) Negative DOW Corning Approved. Standard negative resist HSQ Dow Corning, MSDS HSQ See table here TMAH, AZ400K:H2O H2O process flow HSQ

High resolution patterning with HSQ

AR-N 7520 Negative AllResist Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact Peixiong Shi for information. AR-N7500-7520.pdf‎ See table here PGMEA AR 300-47, TMAH H2O
PMMA Positive AllResist We have various types of PMMA in the cleanroom. Please contact Lithography for information. See table here Anisole MIBK:IPA (1:3), IPA:H2O IPA acetone/1165/Pirahna


ZEP7000 Positive ZEON Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact Lithography for information. ZEP7000.pdf See table here Anisole ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. IPA acetone/1165 Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx‎
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