Specific Process Knowledge/Wafer cleaning: Difference between revisions

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|Removing native oxide
|Removing native oxide
|Cleaning before wafer bonding
|Cleaning before wafer bonding
Removes dust, organics and alkali ions and slight polish of surface.
Removes dust, organics and alkali ions and slightly polish the surface.
Make the surface hydrophillic  
Make the surface hydrophillic  
|Removing dust and particles
|Removing dust and particles

Revision as of 15:08, 4 March 2014

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Cleaning of wafers

During processing it is sometimes mandatory, necessary or just recommended to clean the wafers or the photo lithographic masks. This can be done by different cleaning procedures depending on what the wafers have been exposed to and where they are going to be further processed. As a general rule all wafers that go into the high temperature furnaces need a full RCA clean directly before the furnace step. Wafers that have been etched in KOH is often transferred directly to the warm phosphoric acid for nitride strip. Therefore wafers that have been in the KOH baths, KOH BHF baths or the warm phosphoric acid always need at minimum a 7-up or Piranha clean before they can be further processed. Items that have been outside the cleanroom should always be cleaned in soap and ultra sound followed by a 7-up or Piranha clean before entering the cleanroom. Masks that has become dirty by dust particles and resist residues has to be cleaned in the 7-up (mask) bath before use. Sometimes the wafers need a certain cleaning process before they can enter specific process equipments due to the risk of cross contamination. Please consult the cross contamination scheme to see whether your wafers need a cleaning before the next processing sequence. Below is listed different cleaning procedures available at Danchip.


Comparison of Wafer Cleaning Methods

RCA 7-up & Piranha 5% HF IMEC Soap Sonic
Generel description Two step process to remove organics and metals Removes organics and alkali ions Removing native oxide Cleaning before wafer bonding

Removes dust, organics and alkali ions and slightly polish the surface. Make the surface hydrophillic

Removing dust and particles
Purpose Mandatory prior furnace processes When needed and always after KOH etch and Nitride etch in Phosphoric acid. Sometimes mandatory before next processing step. Optional during RCA cleaning Recommended cleaning and treatment before wafer bonding Mandatory cleaning of very dirty items that enters the cleanroom. Should always be followed by a piranha clean.
Substrate size
  • #1-25 2", 4" and 6" wafers
  • #1-25 2", 4" and 6" wafers
  • #1-25 2", 4" and 6" wafers
  • #1-25 2" and 4" wafers
  • All sizes that can go into the bath
Allowed materials
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Pyrex, other glass and Silicon wafers with Cr ONLY allowed in 7-up (Mask) cleaning bath or beaker in fumehood
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxy-nitride
  • Quartz/fused silica
  • Resists (depending on bath)
  • Pyrex (depending on bath)
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Pyrex
  • All materials