Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide

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Deposition of Gadolinium Cerium Oxide

Thin films of Gadolinium Cerium Oxide (Gd_0.2Ce_0.8O₂) can be deposited using RF sputtering. In this process, the main parameters are temperature and additional oxygen, which can be adjusted to tailor the properties of the deposited films. The target is a solid ceramic 75 mm (0.125" thickness) GCO target bonded to a Cu plate.

• Gd_0.2Ce_0.8O₂ sputtering in Sputter-System Metal-Oxide (PC1).

GCO sputtering in Sputter-System Metal-Oxide (PC1)

	Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)
Generel description	RF sputtering R-RF sputtering
Stoichiometry	d0.2Ce0.8O2 (can be tuned)
Film Thickness	few nm - ? (hundreds of nm)
Deposition rate	0.015-0.025 nm/s
Step coverage	Not investigated
Process Temperature	Up to 400 °C (most likely in the range of 200°C)
Substrate size	Several small samples 100 mm wafer 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Metals III-V materials (use dedicated carrier wafer) Almost anything that is not toxic