Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

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Etching of Titatium is done wet at Danchip. We have ?:
Etching of Titatium is done wet at Danchip. We have ?:


# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
# Standard BHF
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
# ?





Revision as of 10:39, 15 January 2008

Etching of Titanium

Etching of Titatium is done wet at Danchip. We have ?:

  1. Standard BHF
  2. ?


Comparing the two solutions

Aluminium Etch 1 Aluminium Etch 2
General description

Etch of pure aluminium

Etch of aluminium + 1.5% Si

Chemical solution HO:HPO 1:2 PES 77-19-04
Process temperature 50 oC 20 oC
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~100 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist