Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!--'''SEM picture'''--> [[File:Si3N4 pat3 cf4lowcp- 250.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 500.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 1000.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 2000.png|170px]] | |<!--'''SEM picture'''--> [[File:Si3N4 pat3 cf4lowcp- 250.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 500.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 1000.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 2000.png|170px]] | ||
|<!--'''Redeposition - top view'''--> [[File:SiN cf4lowcp sidewalls 01.png|170px]] [[File:SiN cf4lowcp sidewalls 02.png|170px]] | |<!--'''Redeposition - top view'''--> [[File:SiN cf4lowcp sidewalls 01.png|170px]] [[File:SiN cf4lowcp sidewalls 02.png|170px]] | ||
|<!--'''Etch rate in SiO2'''--> | |<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50 | ||
|<!--'''Etch rate in resist'''--> 250nm- 44,98 <br> <br> 500nm- 33,52 <br> <br> 1000nm- 31,16 <br> <br> 2000nm- 25,66 | |<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1,70 <br> <br> 500nm- 2,21 <br> <br> 1000nm- 2,37 <br> <br> 2000nm- 2,98 | |<!--'''Selectivity (SiO2:resist)'''-->250nm- 1,70 <br> <br>500nm- 2,21 <br> <br>1000nm- 2,37 <br> <br>2000nm- 2,98 | ||
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Revision as of 12:01, 20 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests