Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
Jump to navigation
Jump to search
Line 260: | Line 260: | ||
|<!--Process time--> 2:30 | |<!--Process time--> 2:30 | ||
|<!--'''Date'''--> 29/02 <br>-2024 | |<!--'''Date'''--> 29/02 <br>-2024 | ||
|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|170px]] [[File:Si3N4-pat1-chf3t1- | |<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|170px]] [[File:Si3N4-pat1-chf3t1-500.png|170px]] [[File:Si3N4-pat1-chf3t1-1000.png|170px]] [[File:Si3N4-pat1-chf3t1-2000.png|170px]] | ||
|<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|170px]] [[File:SiN chf3.t1 sidewalls 02.png|170px]] | |<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|170px]] [[File:SiN chf3.t1 sidewalls 02.png|170px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | |<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 |
Revision as of 11:57, 20 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests