Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|200px]] [[File:Si3N4-pat1-chf3t1-500.png|200px]] [[File:Si3N4-pat1-chf3t1-1000.png|200px]] [[File:Si3N4-pat1-chf3t1-2000.png|200px]] | |<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|200px]] [[File:Si3N4-pat1-chf3t1-500.png|200px]] [[File:Si3N4-pat1-chf3t1-1000.png|200px]] [[File:Si3N4-pat1-chf3t1-2000.png|200px]] | ||
|<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|200px]] [[File:SiN chf3.t1 sidewalls 02.png|200px]] | |<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|200px]] [[File:SiN chf3.t1 sidewalls 02.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> 500nm- 170,32 <br> 1000nm- 174,45 <br> 2000nm- 179,76 | |<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | ||
|<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> 500nm- 56,36 <br> 1000nm- 64,56 <br> 2000nm- 68,84 | |<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> 500nm- 56,36 <br> 1000nm- 64,56 <br> 2000nm- 68,84 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> 500nm- 3,02 <br> 1000nm- 2,70 <br> 2000nm- 2,61 | |<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> 500nm- 3,02 <br> 1000nm- 2,70 <br> 2000nm- 2,61 |
Revision as of 16:50, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests