Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''SEM picture''' | ! '''SEM picture''' | ||
! '''Redeposition - top view''' | ! '''Redeposition - top view''' | ||
! '''Etch rate SiN''' | ! '''Etch rate SiN (nm/min)''' | ||
! '''Etch rate resist''' | ! '''Etch rate resist (nm/min)''' | ||
! '''Selectivity <br> (SiN:resist)''' | ! '''Selectivity <br> (SiN:resist)''' | ||
|- | |- | ||
| Line 262: | Line 262: | ||
|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|200px]] [[File:Si3N4-pat1-chf3t1-500.png|200px]] [[File:Si3N4-pat1-chf3t1-1000.png|200px]] [[File:Si3N4-pat1-chf3t1-2000.png|200px]] | |<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|200px]] [[File:Si3N4-pat1-chf3t1-500.png|200px]] [[File:Si3N4-pat1-chf3t1-1000.png|200px]] [[File:Si3N4-pat1-chf3t1-2000.png|200px]] | ||
|<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|200px]] [[File:SiN chf3.t1 sidewalls 02.png|200px]] | |<!--'''Redeposition- side view''--> [[File:SiN chf3.t1 sidewalls 01.png|200px]] [[File:SiN chf3.t1 sidewalls 02.png|200px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 155, | |<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> 500nm- 170,32 <br> 1000nm- 174,45 <br> 2000nm- 179,76 | ||
|<!--'''Etch rate in resist'''--> 250nm- 65, | |<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> 500nm- 56,36 <br> 1000nm- 64,56 <br> 2000nm- 68,84 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> 500nm- 3,02 <br> 1000nm- 2,70 <br> 2000nm- 2,61 | |<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> 500nm- 3,02 <br> 1000nm- 2,70 <br> 2000nm- 2,61 | ||
|- | |- | ||
Revision as of 16:49, 18 March 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
| Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Redeposition - top view | Profile angles | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
|---|---|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
12:00 | 04/09/2023 | 
|
|
69.7 nm/min +/- 10.5% |
57.3 nm/min +/- 12.9% |
1.22 | |
| CHF3_t2 | CHF3= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
25:00 | 04/09/2023 | 
|
|
|
26.7 nm/min +/- 11.9% |
24.2 nm/min +/- 21.1% |
1.1 |
| CHF3 t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 | 22/09/2023 | 
|
|
|
9,7 nm/min +/- 34.4% |
1,8 nm/min +/- 46.5% |
5.4 |
| CHF3_t1 | CHF3= 22.5 sccm H2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 12/09/2023 | 
|
|
|
59,6 nm/min +/- 12.9% |
47,5 nm/min +/- 21.5% |
1.25 |
| CHF3_t1 | CHF3= 22.5 sccm O2= 10 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 11/09/2023 | 
|
|
|
60,6 nm/min +/- 10.1% |
130,8 nm/min +/- 8.8% |
0.46 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 20/09/2023 | 
|
|
|
47,3 nm/min +/- 12% |
26,4 nm/min +/- 17,4% |
1.8 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 22/09/2023 | 
|
|
|
36,5 nm/min +/- 10.6% |
17,5 nm/min +/- 13.9% |
2.09 |
| CHF3 t1 | CHF3= 35 sccm H2= 35 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 22/09/2023 | 
|
|
|
42 nm/min +/- 15.4% |
23,8 nm/min +/- 22.2% |
1.76 |
| CHF3 t1 | CHF3= 22.5 sccm CF4= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
10:00 | 22/09/2023 | 
|
|
|
75,8 nm/min +/- 13.1% |
74,9 nm/min +/- 10.8% |
1.01 |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 25mTorr Temp= 20°C |
10:00 | 22/09/2023 | 
|
|
|
- | - | no etch done, polymer deposited |
| CHF3 t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 0°C |
10:00 | 22/09/2023 | 
|
|
|
48 nm/min +/- 11.2% |
23,3 nm/min +/- 13.7% |
2.06 |
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
| Recipe | Recipe parameters | Duration (min) | Date | SEM picture | Etch rate in SiO2 | Etch rate in resist (UVN) |
Selectivity (SiO2:resist) |
|---|---|---|---|---|---|---|---|
| CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 30W Press= 2.5mTorr Temp= 20°C |
10:00 | 13/11/23 |  
|
47 | 24.6 | 1.9 |
| CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 20°C |
10:00 | 13/11/23 |  
|
59 | 30 | 1.9 |
| CHF3_t1 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 45W Press= 2.5mTorr Temp= 0°C |
10:00 | 07/12/23 | 
|
96 | 56 | 1.7 |
| CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
10:00 | 23/10/23 | 
|
27 | 12,5 | 2.1 |
| CHF3_t2 | CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 25W Press= 2.5mTorr Temp= 20°C |
20:00 | 23/10/23 | 
|
8.15 | 7.5 | 1.1 |
TEST OF TABLES DESIGN (WORK ON GOING):
SiN tests
| Recipe | Time (min) | Date | SEM picture | Redeposition - top view | Etch rate SiN (nm/min) | Etch rate resist (nm/min) | Selectivity (SiN:resist) |
|---|---|---|---|---|---|---|---|
| CHF3_t1 CHF3= 22.5 sccm H2= 22.5 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
2:30 | 29/02/2024 |    
|
 
|
250nm- 155,08 500nm- 170,32 1000nm- 174,45 2000nm- 179,76 |
250nm- 65,52 500nm- 56,36 1000nm- 64,56 2000nm- 68,84 |
250nm- 2,37 500nm- 3,02 1000nm- 2,70 2000nm- 2,61 |
| CHF3_t2 CHF3= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02/2024 |    
|
 
|
nm/min +/- % |
nm/min +/- % |
|
| CF4lowCP CF4= 22.5 sccm H2= 22.5 sccm Coil= 150W Platen= 45W Press= 2.5mTorr Temp= 20°C |
5:00 | 29/02/2024 |    
|
 
|
nm/min +/- % |
nm/min +/- % |