Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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=25 jan 2024 - SiO2 test= | =25 jan 2024 - SiO2 test= | ||
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|<!--'''Date'''--> 25/01<br>-2024 | |<!--'''Date'''--> 25/01<br>-2024 | ||
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t2 45w 15m-01.png|250px]] [[File:25.01 CHF3.t2 45w 15m-02.png|250px]] [[File:25.01 CHF3.t2 45w 15m-03.png|250px]] [[File:25.01-CHF3.t2-45w-15m-04.png|250px]] | |<!--'''SEM picture'''--> [[File:25.01 CHF3.t2 45w 15m-01.png|250px]] [[File:25.01 CHF3.t2 45w 15m-02.png|250px]] [[File:25.01 CHF3.t2 45w 15m-03.png|250px]] [[File:25.01-CHF3.t2-45w-15m-04.png|250px]] | ||
|<!--'''Etch rate in SiO2'''-->250nm- | |<!--'''Etch rate in SiO2'''-->250nm- 9,18 <br> <br>500nm- 28,03 <br> <br>1000nm- 28,03 <br> <br>2000nm- 28,75 | ||
|<!--'''Etch rate in resist'''-->250nm- | |<!--'''Etch rate in resist'''-->250nm- 11,09 <br> <br>500nm- 4,22 <br> <br>1000nm- 4,22 <br> <br>2000nm- 4,40 | ||
|<!--'''Selectivity (SiO2:resist)'''-->250nm- | |<!--'''Selectivity (SiO2:resist)'''-->250nm- 0,83 <br> <br>500nm- 6,64 <br> <br>1000nm- 6,64 <br> <br>2000nm- 6,5 | ||
|- | |- | ||
|- | |- |
Revision as of 14:43, 22 April 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
25 jan 2024 - SiO2 test
Etch test of Silicon Nitride
Tested on chips (2*2cm)