Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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=25 jan 2024 - SiO2 test= | =25 jan 2024 - SiO2 test= | ||
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|<!--'''Date'''--> 25/01<br>-2024 | |<!--'''Date'''--> 25/01<br>-2024 | ||
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 45w 10m-02.png|250px]] [[File:25.01 CHF3.t1 45w 10m-03.png|250px]] [[File:25.01 CHF3.t1 45w 10m-04.png|250px]] [[File:25.01 CHF3.t1 45w 10m-05.png|250px]] | |<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 45w 10m-02.png|250px]] [[File:25.01 CHF3.t1 45w 10m-03.png|250px]] [[File:25.01 CHF3.t1 45w 10m-04.png|250px]] [[File:25.01 CHF3.t1 45w 10m-05.png|250px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- | |<!--'''Etch rate in SiO2'''--> 250nm- 90,74 <br> <br> 500nm- 84,63 <br> <br> 1000nm- 89,33 <br> <br> 2000nm- 94,34 | ||
|<!--'''Etch rate in resist'''--> 250nm- | |<!--'''Etch rate in resist'''--> 250nm- 81,1 <br> <br> 500nm- 53,77 <br> <br> 1000nm- 52,23 <br> <br> 2000nm- 54,81 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1 | |<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1,12 <br> <br> 500nm- 1,57 <br> <br> 1000nm- 1,71 <br> <br> 2000nm- 1,72 | ||
|- | |- | ||
|- | |- |
Revision as of 14:40, 22 April 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
25 jan 2024 - SiO2 test
Etch test of Silicon Nitride
Tested on chips (2*2cm)