Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|<!-- '''Recipe name''' --> '''CHF3_t1'''<br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 30W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |<!-- '''Recipe name''' --> '''CHF3_t1'''<br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''30W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--Process time--> 10:00 | |<!--Process time--> 10:00 | ||
|<!--'''Date'''--> 25/01 <br>-2024 | |<!--'''Date'''--> 25/01 <br>-2024 | ||
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 30w 10m-01.png|250px]] [[File:25.01 CHF3.t1 30w 10m-02.png|250px]] [[File:25.01 CHF3.t1 30w 10m-03.png|250px]] [[File:25.01 CHF3.t1 30w 10m-04.png|250px]] | |<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 30w 10m-01.png|250px]] [[File:25.01 CHF3.t1 30w 10m-02.png|250px]] [[File:25.01 CHF3.t1 30w 10m-03.png|250px]] [[File:25.01 CHF3.t1 30w 10m-04.png|250px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- | |<!--'''Etch rate in SiO2'''--> 250nm- 61,99 <br> <br> 500nm- 68,12 <br> <br> 1000nm- 74,7 <br> <br> 2000nm- 76,55 | ||
|<!--'''Etch rate in resist'''--> 250nm- | |<!--'''Etch rate in resist'''--> 250nm- 61,31 <br> <br> 500nm- 49,85 <br> <br> 1000nm- 46,83 <br> <br> 2000nm- 47,3 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- | |<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1,01 <br> <br> 500nm- 1,37 <br> <br> 1000nm- 1,6 <br> <br> 2000nm- 1,62 | ||
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|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34 | |<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34 | ||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15 | |<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15 | ||
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Revision as of 14:35, 22 April 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
25 jan 2024 - SiO2 test
Etch test of Silicon Nitride
Tested on chips (2*2cm)