Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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|-style="background:white; color:black" | |-style="background:white; color:black" | ||
|<!-- '''Recipe name''' --> '''CHF3_t1''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= | |<!-- '''Recipe name''' --> '''CHF3_t1'''<br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 30W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | ||
|<!--Process time--> | |<!--Process time--> 10:00 | ||
|<!--'''Date'''--> | |<!--'''Date'''--> 25/01 <br>-2024 | ||
|<!--'''SEM picture'''--> [[File: | |<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 30w 10m-01.png|250px]] [[File:25.01 CHF3.t1 30w 10m-02.png|250px]] [[File:25.01 CHF3.t1 30w 10m-03.png|250px]] [[File:25.01 CHF3.t1 30w 10m-04.png|250px]] | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | |<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | ||
|<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84 | |<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84 | ||
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|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> 29/02<br>-2024 | |<!--'''Date'''--> 29/02<br>-2024 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Etch rate in SiO2'''--> 250nm- 28,12 <br> <br> 500nm- 41,86 <br> <br> 1000nm- 66 <br> <br> 2000nm- 63,62 | |<!--'''Etch rate in SiO2'''--> 250nm- 28,12 <br> <br> 500nm- 41,86 <br> <br> 1000nm- 66 <br> <br> 2000nm- 63,62 | ||
|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34 | |<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34 | ||
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|<!--'''Process time'''--> 5:00 | |<!--'''Process time'''--> 5:00 | ||
|<!--'''Date'''--> 29/02<br>-2024 | |<!--'''Date'''--> 29/02<br>-2024 | ||
|<!--'''SEM picture'''--> | |<!--'''SEM picture'''--> | ||
|<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50 | |<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50 | ||
|<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66 | |<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66 |
Revision as of 14:27, 22 April 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
25 jan 2024 - SiO2 test
Etch test of Silicon Nitride
Tested on chips (2*2cm)