Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions
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! '''Recipe''' | |||
! '''Time (min)''' | |||
! '''Date''' | |||
! '''SEM picture''' | |||
! '''Etch rate SiN (nm/min)''' | |||
! '''Etch rate resist (nm/min)''' | |||
! '''Selectivity <br> (SiN:resist)''' | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|<!-- '''Recipe name''' --> '''CHF3_t1''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--Process time--> 2:30 | |||
|<!--'''Date'''--> 29/02 <br>-2024 | |||
|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|170px]] [[File:Si3N4-pat1-chf3t1-500.png|170px]] [[File:Si3N4-pat1-chf3t1-1000.png|170px]] [[File:Si3N4-pat1-chf3t1-2000.png|170px]] | |||
|<!--'''Etch rate in SiO2'''--> 250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76 | |||
|<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84 | |||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> <br> 500nm- 3,02 <br> <br> 1000nm- 2,70 <br> <br> 2000nm- 2,61 | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--'''Process time'''--> 5:00 | |||
|<!--'''Date'''--> 29/02<br>-2024 | |||
|<!--'''SEM picture'''--> [[File:Si3N4-pat2-chf3t2-250.png|170px]] [[File:Si3N4-pat2-chf3t2-500.png|170px]] [[File:Si3N4-pat2-chf3t2-1000.png|170px]] [[File:Si3N4-pat2-chf3t2-2000.png|170px]] | |||
|<!--'''Etch rate in SiO2'''--> 250nm- 28,12 <br> <br> 500nm- 41,86 <br> <br> 1000nm- 66 <br> <br> 2000nm- 63,62 | |||
|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34 | |||
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15 | |||
|- | |||
|- | |||
|-style="background:white; color:black" | |||
|<!-- '''Recipe name''' --> '''CF4lowCP''' <br> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br> | |||
|<!--'''Process time'''--> 5:00 | |||
|<!--'''Date'''--> 29/02<br>-2024 | |||
|<!--'''SEM picture'''--> [[File:Si3N4 pat3 cf4lowcp- 250.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 500.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 1000.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 2000.png|170px]] | |||
|<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50 | |||
|<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66 | |||
|<!--'''Selectivity (SiO2:resist)'''-->250nm- 1,70 <br> <br>500nm- 2,21 <br> <br>1000nm- 2,37 <br> <br>2000nm- 2,98 | |||
|- | |||
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|} | |||
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Revision as of 14:24, 22 April 2024
Tests performed with UV resist:
The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.
Tests performed with DUV resist:
The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.
25 jan 2024 - SiO2 test
Etch test of Silicon Nitride
Tested on chips (2*2cm)