Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests CHF3+H2: Difference between revisions

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=25 jan 2024 - SiO2 test=
=SiO2 test - 5 jan 2024=
 
{| border="1" style="text-align: center; width: 320px; height: 200px;"
|colspan="7" style="text-align: center;" style="background:LightGrey" |'''CHF3_t1 @ 30W platen, 10min'''
|-
|colspan="5" style="text-align: center;" style="background: #efefef;" |'''Values'''
|colspan="1" style="text-align: center;" style="background: #efefef;" |'''SEM pictures'''
|-
|-
!Structure size (nm)
|'''structure pitch (nm)'''
|'''SiO2 ER (nm/min)'''
|'''Resist ER (nm/min)'''
|'''Selectivity SiO2/resist'''
|
|-
|-
!250
|500
|61.99
|61.31
|1.01
|[[File:25.01 CHF3.t1 30w 10m-01.png|250px]]
|-
|-
!500
|1000
|68.12
|49.85
|1.37
|[[File:25.01 CHF3.t1 30w 10m-02.png|250px]]
|-
!1000
|2000
|74.7
|46.83
|1.6
|[[File:25.01 CHF3.t1 30w 10m-03.png|250px]]
|-
!2000
|4000
|76.55
|47.3
|1.62
|[[File:25.01 CHF3.t1 30w 10m-04.png|250px]]
|-
|}
 
 
{| border="1" style="text-align: center; width: 320px; height: 200px;"
|colspan="7" style="text-align: center;" style="background:LightGrey" |'''CHF3_t1 @ 45W platen, 10min'''
|-
|colspan="5" style="text-align: center;" style="background: #efefef;" |'''Values'''
|colspan="1" style="text-align: center;" style="background: #efefef;" |'''SEM pictures'''
|-
|-
!Structure size (nm)
|'''structure pitch (nm)'''
|'''SiO2 ER (nm/min)'''
|'''Resist ER (nm/min)'''
|'''Selectivity SiO2/resist'''
|
|-
|-
!250
|500
|90.74
|81.1
|1.12
|[[File:25.01 CHF3.t1 45w 10m-02.png|250px]]
|-
|-
!500
|1000
|84.63
|53.77
|1.57
|[[File:25.01 CHF3.t1 45w 10m-03.png|250px]]
|-
!1000
|2000
|89.33
|52.23
|1.71
|[[File:25.01 CHF3.t1 45w 10m-04.png|250px]]
|-
!2000
|4000
|94.34
|54.81
|1.72
|[[File:25.01 CHF3.t1 45w 10m-05.png|250px]]
|-
|}
 
 
{| border="1" style="text-align: center; width: 320px; height: 200px;"
|colspan="7" style="text-align: center;" style="background:LightGrey" |'''CHF3_t2 @ 45W platen, 15min'''
|-
|colspan="5" style="text-align: center;" style="background: #efefef;" |'''Values'''
|colspan="1" style="text-align: center;" style="background: #efefef;" |'''SEM pictures'''
|colspan="1" style="text-align: center;" style="background: #efefef;" |'''Comments'''
|-
|-
!Structure size (nm)
|'''structure pitch (nm)'''
|'''SiO2 ER (nm/min)'''
|'''Resist ER (nm/min)'''
|'''Selectivity SiO2/resist'''
|
|
|-
|-
!250
|500
|9.18
|11.09
|0.83
|[[File:25.01 CHF3.t2 45w 15m-01.png|250px]]
|
|-
|-
!500
|1000
|22.46
|3.96
|5.67
|[[File:25.01 CHF3.t2 45w 15m-02.png|250px]]
|*it's visible that redeposits, so the ER and selectivity may not be correct
|-
!1000
|2000
|28.03
|4.22
|6.64
|[[File:25.01 CHF3.t2 45w 15m-03.png|250px]]
|*
|-
!2000
|4000
|28.75
|4.40
|6.5
|[[File:25.01-CHF3.t2-45w-15m-04.png|250px]]
|*
|-
|}
 


* The SiO2 layer deposited was 2um, deposited on the C1 furnace (recipe: WET1100, 12h40+00:20).
* They were patterned with 915 UVN resist (DUV negative) and 65nm of BARC.
* The following results were processed on chips (2*2cm) bonded to a 100mm dummy wafer.
<br>


{| border="1" cellspacing="1" cellpadding="1"
{| border="1" cellspacing="1" cellpadding="1"
Line 397: Line 254:
! '''Date'''
! '''Date'''
! '''SEM picture'''
! '''SEM picture'''
! '''Etch rate SiN (nm/min)'''
! '''Etch rate SiO2 (nm/min)'''
! '''Etch rate resist (nm/min)'''
! '''Etch rate resist (nm/min)'''
! '''Selectivity <br> (SiN:resist)'''
! '''Selectivity <br> (SiO2:resist)'''
|-
|-
|-
|-
|-style="background:white; color:black"
|-style="background:white; color:black"
|<!-- '''Recipe name''' --> '''CHF3_t1''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= 15W <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!-- '''Recipe name''' --> '''CHF3_t1'''<br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 800W <br> Platen= '''30W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--Process time--> 2:30
|<!--Process time--> 10:00
|<!--'''Date'''--> 29/02 <br>-2024
|<!--'''Date'''--> 25/01 <br>-2024
|<!--'''SEM picture'''--> [[File:Si3N4-pat1-chf3t1-250.png|170px]] [[File:Si3N4-pat1-chf3t1-500.png|170px]] [[File:Si3N4-pat1-chf3t1-1000.png|170px]] [[File:Si3N4-pat1-chf3t1-2000.png|170px]]
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 30w 10m-01.png|250px]] [[File:25.01 CHF3.t1 30w 10m-02.png|250px]] [[File:25.01 CHF3.t1 30w 10m-03.png|250px]] [[File:25.01 CHF3.t1 30w 10m-04.png|250px]]
|<!--'''Etch rate in SiO2'''-->  250nm- 155,08 <br> <br> 500nm- 170,32 <br> <br> 1000nm- 174,45 <br> <br> 2000nm- 179,76
|<!--'''Etch rate in SiO2'''-->  250nm- 61,99 <br> <br> 500nm- 68,12 <br> <br> 1000nm- 74,7 <br> <br> 2000nm- 76,55
|<!--'''Etch rate in resist'''--> 250nm- 65,52 <br> <br> 500nm- 56,36 <br> <br> 1000nm- 64,56 <br> <br> 2000nm- 68,84
|<!--'''Etch rate in resist'''--> 250nm- 61,31 <br> <br> 500nm- 49,85 <br> <br> 1000nm- 46,83 <br> <br> 2000nm- 47,3
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 2,37 <br> <br> 500nm- 3,02 <br> <br> 1000nm- 2,70 <br> <br> 2000nm- 2,61
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1,01 <br> <br> 500nm- 1,37 <br> <br> 1000nm- 1,6 <br> <br> 2000nm- 1,62
|-
|-
|-
|-
|-style="background:white; color:black"
|-style="background:white; color:black"
|<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!-- '''Recipe name''' --> '''CHF3_t1''' <br> CHF<sub>3</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--'''Process time'''--> 5:00
|<!--'''Process time'''--> 10:00
|<!--'''Date'''--> 29/02<br>-2024
|<!--'''Date'''--> 25/01<br>-2024
|<!--'''SEM picture'''--> [[File:Si3N4-pat2-chf3t2-250.png|170px]] [[File:Si3N4-pat2-chf3t2-500.png|170px]] [[File:Si3N4-pat2-chf3t2-1000.png|170px]] [[File:Si3N4-pat2-chf3t2-2000.png|170px]]
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t1 45w 10m-02.png|250px]] [[File:25.01 CHF3.t1 45w 10m-03.png|250px]] [[File:25.01 CHF3.t1 45w 10m-04.png|250px]] [[File:25.01 CHF3.t1 45w 10m-05.png|250px]]
|<!--'''Etch rate in SiO2'''-->  250nm- 28,12 <br> <br> 500nm- 41,86 <br> <br> 1000nm- 66 <br> <br> 2000nm- 63,62
|<!--'''Etch rate in SiO2'''-->  250nm- 90,74 <br> <br> 500nm- 84,63 <br> <br> 1000nm- 89,33 <br> <br> 2000nm- 94,34
|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34
|<!--'''Etch rate in resist'''--> 250nm- 81,1 <br> <br> 500nm- 53,77 <br> <br> 1000nm- 52,23 <br> <br> 2000nm- 54,81
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1,12 <br> <br> 500nm- 1,57 <br> <br> 1000nm- 1,71 <br> <br> 2000nm- 1,72
|-
|-  
|-
|-
|-style="background:white; color:black"
|-style="background:white; color:black"
|<!-- '''Recipe name''' --> '''CF4lowCP''' <br> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!-- '''Recipe name''' --> '''CHF3_t2''' <br> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--'''Process time'''--> 5:00
|<!--'''Process time'''--> 15:00
|<!--'''Date'''--> 29/02<br>-2024
|<!--'''Date'''--> 25/01<br>-2024
|<!--'''SEM picture'''--> [[File:Si3N4 pat3 cf4lowcp- 250.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 500.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 1000.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 2000.png|170px]]
|<!--'''SEM picture'''--> [[File:25.01 CHF3.t2 45w 15m-01.png|250px]] [[File:25.01 CHF3.t2 45w 15m-02.png|250px]] [[File:25.01 CHF3.t2 45w 15m-03.png|250px]] [[File:25.01-CHF3.t2-45w-15m-04.png|250px]] <br> *it's visible that redeposits, so the ER and selectivity may not be correct.
|<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50
|<!--'''Etch rate in SiO2'''-->250nm- 9,18 <br> <br>500nm- 22,46 <br> <br>1000nm- 28,03 <br> <br>2000nm- 28,75
|<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66
|<!--'''Etch rate in resist'''-->250nm- 11,09 <br> <br>500nm- 3,96 <br> <br>1000nm- 4,22 <br> <br>2000nm- 4,40
|<!--'''Selectivity (SiO2:resist)'''-->250nm- 1,70 <br> <br>500nm- 2,21 <br> <br>1000nm- 2,37 <br> <br>2000nm- 2,98
|<!--'''Selectivity (SiO2:resist)'''-->250nm- 0,83 <br> <br>500nm- 5,67 <br> <br>1000nm- 6,64 <br> <br>2000nm- 6,5
|-
|-
|-
|-
Line 440: Line 297:
=Etch test of Silicon Nitride=
=Etch test of Silicon Nitride=


Tested on chips (2*2cm)
 
* The nitride layer deposited was 560nm, on the PECVD4 (recipe: Standard HF SiN with wafer clean, for 1h). <br>
* They were patterned with 750 DUV resist and 65nm of BARC (exposure:355 J/m2, focus:-3.1). <br>
* The following results were processed on chips (2*2cm) bonded to a 100mm dummy wafer.
 


{| border="1" cellspacing="1" cellpadding="1"
{| border="1" cellspacing="1" cellpadding="1"
Line 473: Line 334:
|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34
|<!--'''Etch rate in resist'''--> 250nm- 23,26 <br> <br> 500nm- 22,60 <br> <br> 1000nm- 16,74 <br> <br> 2000nm- 15,34
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15
|<!--'''Selectivity (SiO2:resist)'''--> 250nm- 1.21 <br> <br> 500nm- 1.85 <br> <br> 1000nm- 3.94 <br> <br> 2000nm- 4.15
|-
|-
|-style="background:white; color:black"
|<!-- '''Recipe name''' --> '''CF4lowCP''' <br> CF<sub>4</sub>= 22.5 sccm <br> H<sub>2</sub>= 22.5 sccm <br> Coil= 150W <br> Platen= '''45W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--'''Process time'''--> 5:00
|<!--'''Date'''--> 29/02<br>-2024
|<!--'''SEM picture'''--> [[File:Si3N4 pat3 cf4lowcp- 250.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 500.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 1000.png|170px]] [[File:Si3N4 pat3 cf4lowcp- 2000.png|170px]]
|<!--'''Redeposition - top view'''--> [[File:SiN cf4lowcp sidewalls 01.png|170px]] [[File:SiN cf4lowcp sidewalls 02.png|170px]]
|<!--'''Etch rate in SiO2'''-->250nm- 76,50 <br> <br>500nm- 73,92 <br> <br>1000nm- 73,94 <br> <br>2000nm- 76,50
|<!--'''Etch rate in resist'''-->250nm- 44,98 <br> <br>500nm- 33,52 <br> <br>1000nm- 31,16 <br> <br>2000nm- 25,66
|<!--'''Selectivity (SiO2:resist)'''-->250nm- 1,70 <br> <br>500nm- 2,21 <br> <br>1000nm- 2,37 <br> <br>2000nm- 2,98
|-
|-
|-
|-

Latest revision as of 12:37, 29 April 2024

Tests performed with UV resist:

The tests were performed on a 100mm wafer patterned on MLA3, with 2.2um AZ5214E resist.

Recipe Recipe parameters Duration (min) Date SEM picture Redeposition - top view Profile angles Etch rate in SiO2 Etch rate in resist
(AZ5214E inverse) 		Selectivity
(SiO2:resist)
CHF3_t1 CHF3= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
12:00 04/09/2023 CHF3 t1 pat C 01.png CHF3 t1 12min af PA 03.png 69.7 nm/min
+/- 10.5% 		57.3 nm/min
+/- 12.9% 		1.22
CHF3_t2 CHF3= 22.5 sccm
Coil= 150W
Platen= 25W
Press= 2.5mTorr
Temp= 20°C
25:00 04/09/2023 CHF3 t2 pat C 05.png CHF3 t2 25min af PA 05.png CHF3 t2 pat C 03.png 26.7 nm/min
+/- 11.9% 		24.2 nm/min
+/- 21.1% 		1.1
CHF3 t2 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 25W
Press= 2.5mTorr
Temp= 20°C
10:00 22/09/2023 CHF3.t2-10H2-25min-C-01.png CHF3.t2 22.5H2 10min af PA 02.png CHF3.t2-10H2-25min-C-08.png 9,7 nm/min
+/- 34.4% 		1,8 nm/min
+/- 46.5% 		5.4
CHF3_t1 CHF3= 22.5 sccm
H2= 10 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 12/09/2023 CHF310 H2 10min 08.png CHF310 H2 10min af PA top 01.png CHF310 H2 10min 10.png 59,6 nm/min
+/- 12.9% 		47,5 nm/min
+/- 21.5% 		1.25
CHF3_t1 CHF3= 22.5 sccm
O2= 10 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 11/09/2023 CHF310 O2 10min 01.png CHF310 O2 10min af PA top 02.png CHF310 O2 10min 04.png 60,6 nm/min
+/- 10.1% 		130,8 nm/min
+/- 8.8% 		0.46
CHF3 t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 20/09/2023 CHF3=22.5 H2 10min C 01.png CHF3.t1 22.5H2 10min af PA 02.png CHF3=22.5 H2 10min C 03.png 47,3 nm/min
+/- 12% 		26,4 nm/min
+/- 17,4% 		1.8
CHF3 t1 CHF3= 22.5 sccm
H2= 35 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 22/09/2023 CHF3 35H2 10min C 02.png CHF3 35H2 10min af PA 01.png CHF3 35H2 10min D 05.png 36,5 nm/min
+/- 10.6% 		17,5 nm/min
+/- 13.9% 		2.09
CHF3 t1 CHF3= 35 sccm
H2= 35 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 22/09/2023 CHF3 3535H2 10min E 01.png CHF3 35.35H2 10min af PA 01.png CHF3 3535H2 10min C 06.png 42 nm/min
+/- 15.4% 		23,8 nm/min
+/- 22.2% 		1.76
CHF3 t1 CHF3= 22.5 sccm
CF4= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
10:00 22/09/2023 CHF3.t1 22.5CF4 10min C 01.png CHF3 22.5CF4 10min af PA 01.png CHF3.t1 22.5CF4 10min C 03.png 75,8 nm/min
+/- 13.1% 		74,9 nm/min
+/- 10.8% 		1.01
CHF3 t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 25mTorr
Temp= 20°C
10:00 22/09/2023 CHF3.t122.5H2 25mT 10m C 04.png CHF3 22.5H2 25mT 10mn af PA 01.png CHF3.t122.5H2 25mT 10m C 03.png - - no etch done,
polymer deposited
CHF3 t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 0°C
10:00 22/09/2023 CHF3-22.5-H2-10min-0C-C-03.png CHF3 22.5H2 10min 0C af PA 01.png CHF3-22.5-H2-10min-0C-C-07.png 48 nm/min
+/- 11.2% 		23,3 nm/min
+/- 13.7% 		2.06



Tests performed with DUV resist:

The resist used was a negative DUV resist (UVN) with 915nm + 88nm BARC layer.

Recipe Recipe parameters Duration (min) Date SEM picture Etch rate in SiO2 Etch rate in resist
(UVN) 		Selectivity
(SiO2:resist)
CHF3_t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 30W
Press= 2.5mTorr
Temp= 20°C
10:00 13/11/23 NP CHF3 t1 22.5 10min 30WP-01.png NP CHF3 t1 22.5 10min 30WP-03.png 47 24.6 1.9
CHF3_t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 45W
Press= 2.5mTorr
Temp= 20°C
10:00 13/11/23 NP CHF3 t1 22.5 10min 45WP-01.png NP CHF3 t1 22.5 10min 45WP-04.png 59 30 1.9
CHF3_t1 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 45W
Press= 2.5mTorr
Temp= 0°C
10:00 07/12/23 CHF3 t1 0C 45W 01.png 96 56 1.7
CHF3_t2 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 25W
Press= 2.5mTorr
Temp= 20°C
10:00 23/10/23 CHF t2 nP 10min-05.png 27 12,5 2.1
CHF3_t2 CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 25W
Press= 2.5mTorr
Temp= 20°C
20:00 23/10/23 CHF t2 nP 20min-02.png 8.15 7.5 1.1



SiO2 test - 5 jan 2024

  • The SiO2 layer deposited was 2um, deposited on the C1 furnace (recipe: WET1100, 12h40+00:20).
  • They were patterned with 915 UVN resist (DUV negative) and 65nm of BARC.
  • The following results were processed on chips (2*2cm) bonded to a 100mm dummy wafer.


Recipe Time (min) Date SEM picture Etch rate SiO2 (nm/min) Etch rate resist (nm/min) Selectivity
(SiO2:resist)
CHF3_t1
CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 30W
Press= 2.5mTorr
Temp= 20°C
10:00 25/01
-2024 		25.01 CHF3.t1 30w 10m-01.png 25.01 CHF3.t1 30w 10m-02.png 25.01 CHF3.t1 30w 10m-03.png 25.01 CHF3.t1 30w 10m-04.png 250nm- 61,99

500nm- 68,12

1000nm- 74,7

2000nm- 76,55 		250nm- 61,31

500nm- 49,85

1000nm- 46,83

2000nm- 47,3 		250nm- 1,01

500nm- 1,37

1000nm- 1,6

2000nm- 1,62
CHF3_t1
CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 45W
Press= 2.5mTorr
Temp= 20°C
10:00 25/01
-2024 		25.01 CHF3.t1 45w 10m-02.png 25.01 CHF3.t1 45w 10m-03.png 25.01 CHF3.t1 45w 10m-04.png 25.01 CHF3.t1 45w 10m-05.png 250nm- 90,74

500nm- 84,63

1000nm- 89,33

2000nm- 94,34 		250nm- 81,1

500nm- 53,77

1000nm- 52,23

2000nm- 54,81 		250nm- 1,12

500nm- 1,57

1000nm- 1,71

2000nm- 1,72
CHF3_t2
CF4= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 45W
Press= 2.5mTorr
Temp= 20°C
15:00 25/01
-2024 		25.01 CHF3.t2 45w 15m-01.png 25.01 CHF3.t2 45w 15m-02.png 25.01 CHF3.t2 45w 15m-03.png 25.01-CHF3.t2-45w-15m-04.png
*it's visible that redeposits, so the ER and selectivity may not be correct. 		250nm- 9,18

500nm- 22,46

1000nm- 28,03

2000nm- 28,75 		250nm- 11,09

500nm- 3,96

1000nm- 4,22

2000nm- 4,40 		250nm- 0,83

500nm- 5,67

1000nm- 6,64

2000nm- 6,5



Etch test of Silicon Nitride

  • The nitride layer deposited was 560nm, on the PECVD4 (recipe: Standard HF SiN with wafer clean, for 1h).
  • They were patterned with 750 DUV resist and 65nm of BARC (exposure:355 J/m2, focus:-3.1).
  • The following results were processed on chips (2*2cm) bonded to a 100mm dummy wafer.


Recipe Time (min) Date SEM picture Redeposition - top view Etch rate SiN (nm/min) Etch rate resist (nm/min) Selectivity
(SiN:resist)
CHF3_t1
CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 800W
Platen= 15W
Press= 2.5mTorr
Temp= 20°C
2:30 29/02
-2024 		Si3N4-pat1-chf3t1-250.png Si3N4-pat1-chf3t1-500.png Si3N4-pat1-chf3t1-1000.png Si3N4-pat1-chf3t1-2000.png SiN chf3.t1 sidewalls 01.png SiN chf3.t1 sidewalls 02.png 250nm- 155,08

500nm- 170,32

1000nm- 174,45

2000nm- 179,76 		250nm- 65,52

500nm- 56,36

1000nm- 64,56

2000nm- 68,84 		250nm- 2,37

500nm- 3,02

1000nm- 2,70

2000nm- 2,61
CHF3_t2
CHF3= 22.5 sccm
H2= 22.5 sccm
Coil= 150W
Platen= 45W
Press= 2.5mTorr
Temp= 20°C
5:00 29/02
-2024 		Si3N4-pat2-chf3t2-250.png Si3N4-pat2-chf3t2-500.png Si3N4-pat2-chf3t2-1000.png Si3N4-pat2-chf3t2-2000.png SiN chf3.t2 sidewalls 01.png SiN chf3.t2 sidewalls 02.png 250nm- 28,12

500nm- 41,86

1000nm- 66

2000nm- 63,62 		250nm- 23,26

500nm- 22,60

1000nm- 16,74

2000nm- 15,34 		250nm- 1.21

500nm- 1.85

1000nm- 3.94

2000nm- 4.15



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