Specific Process Knowledge/Characterization: Difference between revisions
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| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]''' | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]''' | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]''' | | width="50" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]''' | ||
| width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | | width="50" align="center" style="background:#f0f0f0;"|'''IR-camera''' | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Breakdown voltage | |align="left"| Breakdown voltage | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Carrier density/doping profile | |align="left"| Carrier density/doping profile | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Charge carrier life time||||||||||||||||||||||||||||x | |align="left"| Charge carrier life time||||||||||||||||||||||||||||x|||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x | |align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x|||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Crystallinity||||||||||||||||||||||||||x|||||| | |align="left"| Crystallinity||||||||||||||||||||||||||x|||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Deposition uniformity||||||||||x||x||x | |align="left"| Deposition uniformity||||||||||x||x||x|||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x | |align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Dimensions(in plane)]]||x||x||(x)||(x)||x|||||||||||||||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x | |align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)/Topography]]||(x)||(x)||x||x||x|||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Electrical conductivity||||||||||||||||||||||||x | |align="left"| Electrical conductivity||||||||||||||||||||||||x|||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4)||||||x 4) | |align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4)||||||x 4)|||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x | |align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x|||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x | |align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x|||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x | |align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x|||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Band gap||||||||||||||x||||x||x | |align="left"| Band gap||||||||||||||x||||x||x|||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Particles||x||x||x | |align="left"| Particles||x||x||x||||||||||||||||||||||||||||x|||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Phase changes|||||||||||||||||||||||||||||||| | |align="left"| Phase changes|||||||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Reflectivity||||||||||||x||x||||||x 6) | |align="left"| Reflectivity||||||||||||x||x||||||x 6)|||||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x | |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x|||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Resistivity||||||||||||||||||||||x | |align="left"| Resistivity||||||||||||||||||||||x|||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Step coverage||x 1)||x 1) | |align="left"| Step coverage||x 1)||x 1)|||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| Surface roughness||||||x||x||x||||||||||||||||x | |align="left"| Surface roughness||||||x||x||x||||||||||||||||x|||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Thermal conductivity | |align="left"| Thermal conductivity|||||||||||||||||||||||||||||||||||||| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x | |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x|||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Voids in wafer bonding||x||||||||||||||||||x | |align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||x|| | ||
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|-style="background:#DCDCDC;" align="center" | |-style="background:#DCDCDC;" align="center" | ||
|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1)||x 1)||||||||||||x | |align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1)||x 1)||||||||||||x|||||||||||||||||||||| | ||
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|-style="background:#C0C0C0;" align="center" | |-style="background:#C0C0C0;" align="center" | ||
|align="left"| Work function||||||||||||||||||x | |align="left"| Work function||||||||||||||||||x|||||||||||||||||||| | ||
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|} | |} | ||
Revision as of 08:51, 12 September 2022
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Overview of characteristics and where to measure it
| Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Surfscan | IR-camera | III-V ECV-profiler | |
| Breakdown voltage | |||||||||||||||||||
| Carrier density/doping profile | x | ||||||||||||||||||
| Charge carrier life time | x | ||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | ||||||||||||||||||
| Crystallinity | x | ||||||||||||||||||
| Deposition uniformity | x | x | x | ||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | ||||||||||||||
| Dimensions(height)/Topography | (x) | (x) | x | x | x | ||||||||||||||
| Electrical conductivity | x | ||||||||||||||||||
| Element analysis | x | x | x 4) | x 4) | |||||||||||||||
| Film stress | x | x | |||||||||||||||||
| Imaging | x | x | x | x | |||||||||||||||
| Material Hardness | x | ||||||||||||||||||
| Band gap | x | x | x | ||||||||||||||||
| Particles | x | x | x | x | |||||||||||||||
| Phase changes | |||||||||||||||||||
| Reflectivity | x | x | x 6) | ||||||||||||||||
| Refractive index | x | x | |||||||||||||||||
| Resistivity | x | ||||||||||||||||||
| Step coverage | x 1) | x 1) | |||||||||||||||||
| Surface roughness | x | x | x | x | |||||||||||||||
| Thermal conductivity | |||||||||||||||||||
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | |||||||||
| Voids in wafer bonding | x | x | x | ||||||||||||||||
| Wafer thickness | x 1) | x 1) | x | ||||||||||||||||
| Work function | x |
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
- Optical Profiler (Sensofar)
- Dektak XTA stylus profiler
- P17 stylus profiler from KLA-Tencor
- Dektak 3ST stylus profiler
- Stylus Profiler:Dektak150
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)