Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 6" LPCVD nitride furnace
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From April 2016 the 6" LPCVD nitride furnace has been decided mainly to deposition of low stress (silicon rich) nitride, but it is still possible to deposit stoichiometric nitride on 6" wafers. Deposition of stoichiometric nitride on 4" wafers can be done as a back up of the 4" LPCVD nitride furnace
Standard recipes on the 6" nitride furnace:
Quality Controle (QC) for the 6" LPCVD nitride furnace (Oct. 2010 - Oct. 2013) | ||||||||||||||||||||||||||||||||||||||||||||
There is no QC on "NITRIDE4" and "NITRIDE6" recipe.
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Expected results when using the standard recipes on the 6" nitride furnace:
QC Recipe | Nitride deposition rate [nm/min] | Uniformity of the
nitride deposition rate [%] |
Refractive index | Uniformity of the
refractive index [%] |
Stress [MPa] | |
---|---|---|---|---|---|---|
Over one wafer
4" wafers
|
"4NITDAN" - now "NITRIDE4" | 2.60 | 3.00 | 2.006 | 0.30 | ~1100 (measured November 2010)
~1150 (measured January 2013) |
Over one wafer
4" wafers
|
"NITRIDE4" | 3.44 | 1.77 | 2.011 | 0.01 | |
Over the boat
4" wafers
|
"4NITDAN" - now "NITRIDE4" | 2.58 | 3.20 | 2.009 | 0.10 | |
Over the boat
4" wafers
|
"NITRIDE4" | 3.42 | 2.89 | 2.013 | 0.01 | |
Over one wafer
6" wafers
|
"6NITDAN" - now "NITRIDE6" | 2.56 | 1.57 | 2.01 | 0.31 | |
Over the boat
6" wafers
|
"6NITDAN" - now "NITRIDE4" | 2.52 | 1.95 | 2.01 | 0.25 |