Ti Sputtering

This page presents the results of Ti deposition using DC sputtering in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is Ti. Source #3 (DC) was used.

The fabrication and characterization described below were conducted in 2021 by Evgeniy Shkondin, DTU Nanolab. The prepared samples were investigated by the X-ray Reflectivity method. The focus of the study was the deposition conditions.

The process recipe in a Sputter-System (Lesker) is following:

Deposition type: DC
Power: Variable.
Pressure: 3 mTorr
Gas: Ar
Deposition time: Variable.
Temperature: 20°C (no heating)

Deposition rate as a function of power.
Deposition rate as a function of power is represented only by two measurements (20W and 250W). Nevertheless, since the fit value goes directly through the origin of the plot it looks very trustworthy.

Power 20W

Such a low power can be used for doping purposes during transparent conducting oxide thin film production (such as doped ZnO or similar). For other applications higher powers are preferable.

Measured DC bias: 253V
Deposition time: 1800s
Deposition Rate: 0.007 nm/s

Layer parameter list
Layer name	Thickness (nm)	Density (g/cm³)	Rougness (nm)	Delta	Beta
Moisture	1.29	1.00	1.75	3.2782e-6	7.6125e-8
Ti (sputtered)	12.63	4.41	0.94	1.2532e-5	1.0221e-6
SiO₂ (native oxide)	2.00	2.14	0.32	6.9461e-6	9.0523e-8
Si (wafer)	$\infty$	2.328	0.53	7.5796e-6	1.7601e-7

XRR analysis of Ti thin film.
X-ray reflectivity. Measurement and Fit.

Power 250W

High powers can be used for metalic contacts, adhesion layers, etc.

Measured DC bias: 330V
Deposition time: 60s
Deposition Rate: 0.094 nm/s

Layer parameter list
Layer name	Thickness (nm)	Density (g/cm³)	Rougness (nm)	Delta	Beta
Moisture	0.32	1.46	0.04	4.4860e-6	2.1962e-7
Ti (sputtered)	5.66	4.95	1.85	1.4735e-5	1.2017e-6
SiO₂ (native oxide)	1.48	1.74	0.37	5.6276e-6	7.3340e-8
Si (wafer)	$\infty$	2.328	0.29	7.5796e-6	1.7601e-7

XRR analysis of Ti thin film.
X-ray reflectivity. Measurement and Fit.