AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
150
0.001
0.883
TBD
TBD
TBD
Tested by Maksim Zalkovskij from NILT
150
0.005
1.289
0.682
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
150
0.01
1.165
0.751
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
200
0.005
1.738
1.22
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
200
0.01
1.633
1.09
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
250
0.005
2.133
1.59
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
250
0.01
2.067
1.87
AFM image of the NiV film surface on the Si substrate/ Dec 2016
SEM image of the cross section of NiV on the Si substrate/ Dec 2016
NiV deposition rate VS Sputtering power
The deposition rate of NiV film is strongly dependent on the sputtering power and from the graph below also shows that at lower sputtering pressure gives higher deposition rate.
The relation between deposition rate and the sputtering power at two sputtering pressure are :
Variation with Sputtering power of the NiV film deposition rate at the process pressure 0.005 mbar and 0.01 mbar/ Dec 2016
NiV film roughness VS Sputtering power
NiV film roughness is highly dependent on sputtering power. The graph below shows that the roughness of NiV film is increased at higher sputtering power. On the other hand, the sputtering pressure does not have much influence on the film roughness.
Variation with Sputtering power of the NiV film roughness at the process pressure 0.005 mbar and 0.01 mbar/ Dec 2016