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Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum

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Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

Sputtering of Molybdenum

Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in link here and the chart below.


E-beam evaporation (Temescal) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Mo

(line-of-sight deposition)

Sputter deposition of Mo

(not line-of-sight)

Sputter deposition of Mo

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean
Layer thickness 10Å to 600 nm * 10Å to 500 Å 10Å to at least 100 nm (discuss with staff)
Deposition rate 1Å/s to 10Å/s Depends on process parameters, roughly about 1 Å/s At least up to 4 Å/s. See process log.
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8

Almost any as long as it does not outgas.

Comment Sputter target size 2". Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details.


* Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)