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Experiments done with the TDESC electrode that we installed in 2010 (by Roy Cork and Berit Herstrøm @Nanolab)
After changing the electrode to the TDESC type we got a lot of issues with trenching during the acceptance test. After doing a lot of experiments and optimization it turned out that this was probably do to a bad resist profile. We used a negative resist and the problems were gone. Here I show some of the results we got during this optimization.
Conclusions
- Very important to have a good resist profile before etch.
- Trenching and rounded corners can be controlled with coil and platen power.
- H2 does not have much influence (expected to have influence on the SiO2:Si selectivity)
- C4F8 flow has a influence on the profile and on the aspect ratio dependent etch - keep it low.
- Pressure does not show much influence
- This is the resist mask profile before etching
- Variation of Platen power at coil power 1300W, no H2 and C4F8 at 10sccm
Platen power 200W.
Etch time 40min.
Etch rate 243nm/min.
Mask selectivity 3.9
Platen power 150W.
Etch time 40min.
Etch rate 216nm/min.
Mask selectivity 4.3
- Variation of Platen power and He flow at coil power 1600W, no H2 and C4F8 at 10sccm
Platen power 200W.
Etch time 25min.
Etch rate 336nm/min.
Mask selectivity 3.1
Platen power 150W.
Etch time 25min.
Etch rate 160nm/min.
Mask selectivity 2.7
Platen power 200W.
He flow 300sccm
Etch time 25min.
Etch rate 284nm/min.
Mask selectivity 4.2
- Variation of Platen power and He flow at coil power 1000W, no H2 and C4F8 at 10sccm
Platen power 300W.
Etch time 20min.
Etch rate ?nm/min.
Mask selectivity ?
Still a little trenching
Platen power 200W.
Etch time 20min.
Etch rate 315nm/min.
Mask selectivity 3.2
still a little trenching
Platen power 150W.
Etch time 30min.
Etch rate 250nm/min.
Mask selectivity 3.6
No trenching, corner a bit rounded
Platen power 180W.
Etch time 30min.
Etch rate 280nm/min.
Mask selectivity 2.8
Very little trenching in the large opening and very little rounded corners in the small opening. A good compromise.
- Variation of He flow and pressure at coil power 1000W and platen power 180W (He: 174sccm - pressure: 4mTorr), no H2 and C4F8 at 10sccm
Etch time 30min.
Etch rate 280nm/min.
Mask selectivity 2.8
He flow 300sccm
Etch time 30min.
Etch rate 160nm/min.
Mask selectivity 3.3
Pressure 2.3mTorr
Etch time 30min.
Etch rate 284nm/min.
Mask selectivity 3.5
Pressure 6mTorr
He flow 300sccm
Etch time 30min.
Etch rate ?nm/min.
Mask selectivity ?
- Variation of C4F8 flow at coil power 1000W and platen power 180W, He: 300sccm, pressure: 4mTorr), no H2
C4F8 flow at 16sccm.
Etch time 30min.
Etch rate ?nm/min.
Mask selectivity ?
- Negative mask
resist profile before etch
C4F8: 10sccm
He: 300sccm
H2: 8sccm
Coil power: 1000W
Platen power: 180W
Etch time 35min.
Etch rate ?nm/min.
Mask selectivity ?
C4F8: 5sccm
He: 174sccm
H2: 4sccm
Coil power: 1300W
Platen power: 200W
Etch time 30min.
Etch rate ?nm/min.
Mask selectivity ?