Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE/PolySi mask/Images of m PolySi1 etches

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Process date: February 2012 Recipe: m_poly@60degrees Process time: 25 min Mask: Poly Si 1.8 µm Etch depth: 12.5 µm Line width mask: 25µm Line with after etch: 21.8µm	Process date: February 2012 by bghe@nanolab Recipe: m_poly@60degrees Process time: 25 min Mask: Poly Si 1.8 µm thick Etch depth: 12.5 µm Line width mask: 8µm Line with after etch: 5.2µm	Process date: February 2012 bghe@nanolab Recipe: m_poly@60degrees Process time: 25 min Mask: Poly Si 1.8 µm Etch depth: 12.5 µm Line width mask: 6µm Line with after etch: 3.4µm	Process date: February 2012 bghe@nanolab Recipe: m_poly@60degrees Process time: 25 min Mask: Poly Si 1.8 µm Etch depth: 12.5 µm Line width mask: 4µm Line with after etch: 1.5µm Sharp tip/edge is formed because the Si mask is completely etched away man the line becomes lower that the wider lines due to this.