Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0
Trial runs on HTF stepper wafers 22/6-2012
| Substrate information | Wafer | S002872 |
|---|---|---|
| Substrate description | 200 nm wide trenches with 400 nm pitch in Barc+stepper resist on quarter 6" wafer CB on oxide carrier | |
| Date | 22/6-2012 | |
| Tool | Pegasus | |
| Process | Recipe | nb-1.0 |
| Tool conditioning | TDESC clean (?) then 30 second barc etch step before etch | |
| Process duration | 3:45 minutes | |
| Purpose | test | |
| Characterisation | SEM Zeiss |
- SEM images
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Improved matching 11/9-2012
| Substrate information | Wafer | S003051 |
|---|---|---|
| Substrate description | 200 nm wide trenches with 400 nm pitch in Barc+stepper resist on quarter 6" wafer CB on oxide carrier | |
| Date | 11/9-2012 | |
| Tool | Pegasus | |
| Process | Recipe | nb-1.0 |
| Tool conditioning | TDESC clean (?) then 30 second barc etch step before etch | |
| Process duration | 8:00 minutes or 60 cycles | |
| Purpose | Improved matching | |
| Characterisation | SEM Zeiss |
- SEM images
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Test run on AZ resist to see if it behaves well, 21/9-2012
| Substrate information | Wafer | C01290.03 |
|---|---|---|
| Mask | 2.2 µm AZ resist | |
| Date | 21/9-2012 | |
| Tool | Pegasus | |
| Process | Run ID | C12090.03 |
| Tool conditioning | 5 minute TDESC clean | |
| Mask description | Travka50 mask | |
| Purpose | See how the nb-1.0 behaves on AZ resist | |
| Characterisation | SEM Leo |
- SEM images
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