Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/EM with resist mask

From LabAdviser

Looking at bit on the effect of using electromagnets for etching SiO2 with DUV resist

Unless otherwise stated, all content in this section was done by Berit Herstrøm, DTU Nanolab

  • Removing the H2 from the recipe to get less redeposition @ 200W platen power, EM:02/30A
  • Recipe name: SiO2_res, Recipe no. 10+EM+edit coils: C09975 coil_2500W, platen:200W, EM:02/30A, Pressure:8.8mTorr, C4F8:25.6sccm, He:448.7sccm, H2:0sccm, 3:56 min
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2_Etch/EM_with_resist_mask&oldid=47397"