Specific Process Knowledge/Etch/DRIE/Pegasus/DREM/DREM 3kW 100% b

From LabAdviser
Jump to navigation Jump to search



Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
29/11-2019 Medusa One Si / 10% stab-19 chamber clean 20 nanolab/ jmli /DREM 3.0 kW 100% b S018653 Process log entry

S018653a000.png S018653a001.png S018653a002.png S018653a003.png S018653a004.png S018653a005.png S018653a006.png S018653a007.png S018653a008.png S018653a009.png S018653a010.png S018653a011.png S018653a012.png S018653a013.png

SEM image: a000 a001 a002 a003 a004 a005 a006 a007 a008 a009 a010 a011 a012 a013
Trench width (um) 159.77 401.82 251.88 250.36 158.96 99.72 61.82 40.77 32.13 25.67 12.84 7.24 4.13 2.6
Etched depth (um) 145.56 145.42 145.8 147.62 146.52 142.74 136.64 128.65 123.88 118.18 100.34 84.65 69.04 60.36
Etch rate (um/min) 14.56 14.54 14.58 14.76 14.65 14.27 13.66 12.86 12.39 11.82 10.03 8.46 6.9 6.04
Etch rate (nm/cyc) 1.21 1.21 1.21 1.23 1.22 1.19 1.14 1.07 1.03 0.98 0.84 0.71 0.58 0.5
Sidewall bowing (%) -0.28 -0.51 -0.38 -0.38 -0.4 0.05 0.18 -0.14 0.09 0.19 0.36 0.45 0.52 0.53
Sidewall angle (degs) 92.65 93.1 92.66 93.02 92.84 92.17 92.04 91.86 91.92 91.7 91.52 91.05 90.71 90.61
Bottom bowing (%) 8.1 3.9 6.18 6.71 9.14 10.53 14.26 17.43 16 16.76 15.69 16.18 14.53 11.69
Aspect ratio 0.87 0.35 0.56 0.57 0.88 1.36 2.05 2.86 3.41 4.05 6.47 9.64 13.86 18.56