Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE

Because the AOE is owned by Hymite and the status of the future accessibility to this equipment is unknown - DANCHIP has not reserved much time to check and develop processes on the AOE.

Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material

Parameter	Si mask	Resist mask
Coil Power [W]	1300	1000
Platen Power [W]	500	300
Platen temperature [oC]	35	0
He flow [sccm]	300	174
C$_{4}$F$_{8}$ flow [sccm]	18	10
H$_{2}$ flow [sccm]	0	8
Pressure [mTorr]	4	4

Typical results	Si mask STS result	Si mask DANCHIP result	Resist mask STS result	Resist mask DANCHIP result
Etch rate [nm/min]	500		300	280
Selectivity [:1]	20		4	3.2
Profile [o]	>88		>88

Etching of micro structures in Silicon Oxide with Aluminium as masking material

Parameter	Al mask
Coil Power [W]	1800
Platen Power [W]	180
Platen temperature [oC]	35
C$_{4}$F$_{8}$ flow [sccm]	80
O$_{2}$ flow [sccm]	10
Pressure [mTorr]	6

Typical results	Al mask STS result	Al mask DANCHIP result
Etch rate [nm/min]	>500
Selectivity [:1]	>50
Profile [o]	>88

Etching of sub-micro structures in Silicon Oxide with (poly)silicon or Aluminium as masking material

Parameter	Si mask	Al mask	Very thin Al mask
Coil Power [W]	1600	1100	2000
Platen Power [W]	200	500	140
Platen temperature [oC]	0	35	35
He flow [sccm]	300	50	60
C$_{4}$F$_{8}$ flow [sccm]	6	26	29
H$_{2}$ flow [sccm]	18	0	0
O$_{2}$ flow [sccm]	0	0	16
Pressure [mTorr]	4	4

Typical results	Si mask STS result	Si mask DANCHIP result	Al mask STS result	Al mask DANCHIP result	Thin Al mask STS result	Thin Al mask DANCHIP result
Etch rate [nm/min]	200		275
Selectivity [:1]	11		>50		Should be larger than for the other Al mask recipe
Profile [o]	86		90		90