Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE

Etching of micro structures in Silicon Oxide with photoresist or (poly)silicon as masking material

Parameter	Si mask	Resist mask
Coil Power [W]	1300	1000
Platen Power [W]	500	300
Platen temperature [oC]	35	0
He flow [sccm]	300	174
C$_{4}$F$_{8}$ flow [sccm]	18	10
H2 flow [sccm]	0	8
Pressure [mTorr]	4	4

Typical results	Si mask STS result	Si mask DANCHIP result	Resist mask STS result	Resist mask DANCHIP result
Etch rate [nm/min]	500		300	280
Selectivity [:1]	20		4	3.2
Profile [o]	>88		>88

Etching of micro structures in Silicon Oxide with Aluminium as masking material

Parameter	Al mask
Coil Power [W]	1800
Platen Power [W]	180
Platen temperature [oC]	35
C$_{4}$F$_{8}$ flow [sccm]	80
O$_{2}$ flow [sccm]	10
Pressure [mTorr]	6