Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420

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KLA-Tencor Surfscan 6420

The image is from the cleanroom at the place it was refurbish in California.

Particles counting of a unpatterned surface. A broad range of particles size from 0.1 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films as e.g. Poly-si, Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it not count as a particle.


The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

LabManager

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose
  • Drive-in of boron
  • Oxidation of silicon
  • Oxidation of boron phase layer
  • Annealing of the oxide
Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker)
  • Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, H2 and N2
Substrates Batch size
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
Substrate material allowed
  • Silicon wafers (new or RCA cleaned wafers)
  • From A2 furnace directly (e.g. incl. Predep HF)