Specific Process Knowledge/Etch/Etching of Polymer
THIS PAGE IS UNDER CONSTRUCTION
Polymer dry etching
Upgrading the silicon etch capability at Danchip with the DRIE-Pegasus has pushed our old ASE (Advanced Silicon Etcher) out of the line so that it now only serves as backup silicon dry etcher. We have therefore decided that the ASE must be converted to a polymer etcher instead. Hence, it will join the plasma asher and to some extend the RIE's where polymer etching is allowed. In RIE1 it is only for removing photo resist before or after a RIE etch if the plasma asher cannot be used for some reason. On RIE2 you can get allowance for some other polymer etching but you have to ask first.
Feedback to this page: click here
Etchning of Polymers
Stripping of polymers are often done by wet chemistry in a solvent that dissolves the given polymer. If wet chemistry cannot be used or a more controled etch of the polymer is needed a plasma system is used instead. Plasma ashers are design for removing polymers in primarily oxygen plasmas. It you need a more directional etch with a masking material RIE2 or ASE can be used.
Comparison method 1 and method 2 for the process
ASE | Plasma asher 1 | Plasma asher 2 | RIE2 | By wet etch
| |
---|---|---|---|---|---|
Generel description | Generel description - method 1 | Generel description - method 2 | Generel description - method 3 | Generel description - method 4 | Generel description - method 5 |
Parameter 1 |
|
|
|
|
|
Parameter 2 |
|
|
|
|
|
Substrate size |
|
|
|
|
|
Allowed materials |
|
|
|
|
|