Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow

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Revision as of 09:36, 31 July 2012 by BGE (talk | contribs) (New page: =Etch slow= This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min....)
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Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

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