Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE

Etching of micro structures in Silicon Oxide with photoresist as masking material

The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:

Parameter	Resist mask
Coil Power [W]	1300
Platen Power [W]	200
Platen temperature [oC]	0
He flow [sccm]	174
C$_{4}$F$_{8}$ flow [sccm]	5
H$_{2}$ flow [sccm]	4
Pressure [mTorr]	4

Typical results	Negative Resist mask DANCHIP result
Etch rate [nm/min]	~230nm/min
Selectivity [:1]	~3.6
Profile [o]	~90
Images	See here
Comments	A negative resist process was done to make the mask. I have not had so good results with a positive resist process.

Etching of micro structures in Silicon Oxide with PolySi as masking material

Parameter	Poly Si mask
Coil Power [W]	1300
Platen Power [W]	500
Platen temperature [oC]	60
He flow [sccm]	300
C$_{4}$F$_{8}$ flow [sccm]	18
H$_{2}$ flow [sccm]	0
Pressure [mTorr]	4

Typical results	PolySi mask - tested by Yunhong Ding @fotonik	PolySi mask - tested Feb. 2012 by bge@danchip
Etch rate	~0.55 µm/min	0.50 µm/min
Selectivity	1:~10	1:17
SiO2 etch uniformity	not tested	±4.5%
Profile [o]	not tested	not tested
Images	.	See here
Comments	.	Line width reduction is about 2.5µm when etching 12.5µm down. See the images to get more info on this