Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE
The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.
Etching of micro structures in Silicon Oxide with photoresist as masking material
The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:
Parameter | Resist mask |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
He flow [sccm] | 174 |
CF flow [sccm] | 5 |
H flow [sccm] | 4 |
Pressure [mTorr] | 4 |
Typical results | Negative Resist mask DANCHIP result |
---|---|
Etch rate [nm/min] | ~230nm/min |
Selectivity [:1] | ~3.6 |
Profile [o] | ~90 |
Images | See here |
Comments | A negative resist process was done to make the mask. I have not had so good results with a positive resist process. |
Etching of micro structures in Silicon Oxide with PolySi as masking material
Parameter | Poly Si mask |
---|---|
Coil Power [W] | 1300 |
Platen Power [W] | 500 |
Platen temperature [oC] | 60 |
He flow [sccm] | 300 |
CF flow [sccm] | 18 |
H flow [sccm] | 0 |
Pressure [mTorr] | 4 |
Typical results | PolySi mask - tested by Yunhong Ding @fotonik | PolySi mask - tested Feb. 2012 by bge@danchip |
---|---|---|
Etch rate | ~0.55 µm/min | 0.50 µm/min |
Selectivity | 1:~10 | 1:17 |
SiO2 etch uniformity | not tested | ±4.5% |
Profile [o] | not tested | not tested |
Images | . | See here |
Comments | . | Line width reduction is about 2.5µm when etching 12.5µm down. See the images to get more info on this |