Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using AOE

The AOE was upgraded in the spring 2010 and there has been a lot of problems with it since. It is running now but we still do not have a very good recipe. Ask Berit (BGE) for the resent progress in process development.

Etching of micro structures in Silicon Oxide with photoresist as masking material

The recipe for oxide etching at the moment is the one called: m_res_ny. The parameters and results so fare are as follows:

Parameter	Resist mask
Coil Power [W]	1300
Platen Power [W]	200
Platen temperature [oC]	0
He flow [sccm]	174
C$_{4}$F$_{8}$ flow [sccm]	5
H$_{2}$ flow [sccm]	4
Pressure [mTorr]	4

Typical results	Negative Resist mask DANCHIP result
Etch rate [nm/min]	~230nm/min
Selectivity [:1]	~3.6
Profile [o]	~90
Images	See here
Comments	A negative resist process was done to make the mask. I have not had so good results with a positive resist process.

Etching of micro structures in Silicon Oxide with PolySi as masking material

Parameter	Poly Si mask
Coil Power [W]	1300
Platen Power [W]	500
Platen temperature [oC]	60
He flow [sccm]	300
C$_{4}$F$_{8}$ flow [sccm]	18
H$_{2}$ flow [sccm]	0
Pressure [mTorr]	4

Typical results	PolySi mask - tested by Yunhong Ding @fotonik	PolySi mask - tested Feb. 2012 by bge@danchip
Etch rate	~0.55 µm/min	0.50 µm/min
Selectivity	1:~10	1:17
SiO2 etch uniformity	not tested	±4.5%
Profile [o]	not tested	not tested
Images	.	See here
Comments	.	.