Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2

Acceptance test for SiO2 deposition:

.	Acceptance Criteria	Acceptance Result 1	Acceptance Result 2
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	100 mm SSP Si wafer 525+-25 µm thick	100 mm SSP Si wafer 525+-25 µm thick
Material to be deposited	SiO2 The purpose of the SiO2 is to be part of a mirror: <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Extra quarterwavelength layer of <br\> TiO2 <br\> 5 quarterwavelength pairs of <br\> SiO2 <br\> TiO2 <br\> Design wavelength (for refractive indices and layer thicknesses): 1300nm <br\> The acceptance criteria is set up for the single SiO2 and TiO2 layers. <br\> Five runs in a row for each material.	SiO2	SiO2
Deposition thickness	222nm	~215nm	224nm
Deposition rate	6 nm/min	7.42nm/min +- 0.04nm/min One standard deviation	7.73nm/min Only made once
Thickness uniformity	<+-1%	+-(0.46% +-0.10%)	+-0.45%
Reproducibility	<+-1.5%	+-0.6%	Not measured
Stress	<500MPa	~600MPa	475MPa

	Recipe 1	Recipe 2
Platen angle	15 degrees	10 degrees
Platen rotation speed	20rpm	20rpm
Ar(N) flow	4 sccm	4 sccm
Ar(dep. source) flow	9 sccm	8 sccm
I(N)	310mA	320mA
Power	675W	700W
I(B)	310mA	280mA
V(B)	1200V	1100V
Vacc(B)	400V	400V

Other results

Roughness of the surface

Measured with the Optical profiler - PSI mode (on one sample from the acceptace test): Sa= 0.6nm